RF Power Field Effect Transistors

960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 110V 1.03GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 110V 1.03GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

1009 41⁄2˝ & 6˝ Stainless Steel Gauge

FEATURES „ PLUS!™ Performance dampens vibration, shock and pulsation effects „ Wide selection of pressure connections and pressures ranges „ Dry and liquid-filled versions „ Micrometer adjustable pointer

1009 2½˝, 3½˝ Stainless Steel Pressure Gauges

FEATURES Meets ASME B40.100 specifications All welded stainless steel construction PLUS™ Performance option dampens vibration, shock and pulsation effects MSL helium leak tested to 1X10-6 scc/s Ventable fill plug Wide selection of connections NSF-61 Compliant

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

1009 2½˝, 3½˝ Stainless Steel Pressure Gauges

FEATURES Meets ASME B40.100 specifications All welded stainless steel construction PLUS™ Performance option dampens vibration, shock and pulsation effects MSL helium leak tested to 1X10-6 scc/s Ventable fill plug Wide selection of connections NSF-61 Compliant

Pulse Transformers

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