MEDIUM POWER TMOS FET 250 mA, 200 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers

Power MOSFET 250 mA, 200 Volts

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MEDIUM POWER TMOS FET 250 mA, 200 VOLTS

Power MOSFET 250 mA, 200 Volts

Power MOSFET 250 mA, 200 Volts

文件：78.63 Kbytes Page：8 Pages

Power MOSFET 250 mA, 200 Volts

文件：78.63 Kbytes Page：8 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 6.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 6.0 Twists/foot (m

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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Smooth, high torque, roller ratchet handle

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