LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, elimi

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, elimi

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, elimi

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

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NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits