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MMDT3906价格
参考价格:¥0.2248
型号:MMDT3906-7-F 品牌:Diodes 备注:这里有MMDT3906多少钱,2024年最近7天走势,今日出价,今日竞价,MMDT3906批发/采购报价,MMDT3906行情走势销售排行榜,MMDT3906报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MMDT3906 | DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features EpitaxialPlanarDieConstruction IdealforLowPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage | TRSYS Transys Electronics | ||
MMDT3906 | DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •BVCEO>-40V •IC=-200mAHighCollectorCurrent •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMDT3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Ha | DIODESDiodes Incorporated 达尔科技 | ||
MMDT3906 | DUALSURFACEMOUNTPNPTRANSISTORS Thisdevicecontainstwoelectrically-isolated2N3906PNPtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●ElectricallyIsolatedDu | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
MMDT3906 | DualPNPSmallSignalSurfaceMountTransistor FEATURES ●Epitaxialplanardieconstruction. ●Idealforlowpoweramplificationandswitching. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalswitchingandamplification. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
MMDT3906 | PNPSmallSignalSurfaceMountTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •EpitaxialPlanarDieConstruction •Epo | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
MMDT3906 | DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4) | DIODESDiodes Incorporated 达尔科技 | ||
MMDT3906 | DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR DESCRIPTION TheUTCMMDT3906isaDualPNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *SuitableforLowPowerAmplificationandSwitching *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
MMDT3906 | DUALTRANSISTOR(PNPPNP) DUALTRANSISTOR(PNP+PNP) FEATURES ●Epitaxialplanardieconstruction ●Idealforlowpoweramplificationandswitching | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
MMDT3906 | Multi-ChipTRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
MMDT3906 | Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction Idealforlowpoweramplificationandswitching | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
MMDT3906 | DualPNPSmallSignalSurfaceMountTransistor FEATURES ●Epitaxialplanardieconstruction. ●Idealforlowpoweramplificationandswitching. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalswitchingandamplification. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
MMDT3906 | PNPPNPPlastic-EncapsulateTransistors Features Epitaxialplanardieconstruction Idealforlowpoweramplificationandswitching | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | ||
MMDT3906 | DUALTRANSISTOR(PNPPNP) 文件:262.81 Kbytes Page:5 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
MMDT3906 | DualPNPSmallSignalSurfaceMountTransistor 文件:148.79 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
MMDT3906 | 40VDUALPNPSMALLSIGNALTRANSISTOR 文件:446.77 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | ||
MMDT3906 | PNPSmallSignalSurfaceMountTransistors 文件:285.08 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
MMDT3906 | Multi-ChipTransistor 文件:240.65 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | ||
MMDT3906 | PNPSmallSignalSurfaceMountTransistors 文件:256.25 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
MMDT3906 | DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:431.4 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | ||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4) | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •BVCEO>-40V •IC=-200mAHighCollectorCurrent •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMDT3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Ha | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4) | DIODESDiodes Incorporated 达尔科技 | |||
Plastic-EncapsulateTransistors FEATURES ·Epitaxialplanardieconstruction ·Idealforlowpoweramplificationandswitching | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR DESCRIPTION TheUTCMMDT3906isaDualPNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *SuitableforLowPowerAmplificationandSwitching *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR DESCRIPTION TheUTCMMDT3906isaDualPNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *SuitableforLowPowerAmplificationandSwitching *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
DUALSURFACEMOUNTPNPTRANSISTORS Thisdevicecontainstwoelectrically-isolated2N3906PNPtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●ElectricallyIsolatedDu | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
DUALSURFACEMOUNTPNPTRANSISTORS Thisdevicecontainstwoelectrically-isolated2N3906PNPtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●ElectricallyIsolatedDu | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
DUALPNPGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-200mA •IncompliancewithEURoHS2002/95/ECdirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
PNPSmallSignalSurfaceMountTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •EpitaxialPlanarDieConstruction •Epo | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●IdealforLowPowerAmplificationandSwitching ●Ultra-SmallSurfaceMountPackage ●LeadFreeByDesign/RoHSCompliant(Note1) ●QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | |||
PNPPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpitaxialDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •Marking:KA | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●IdealforLowPowerAmplificationandSwitching ●Ultra-SmallSurfaceMountPackage ●LeadFreeByDesign/RoHSCompliant(Note1) ●QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●IdealforLowPowerAmplificationandSwitching ●Ultra-SmallSurfaceMountPackage ●LeadFreeByDesign/RoHSCompliant(Note1) ●QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note4) | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note4) | DIODESDiodes Incorporated 达尔科技 | |||
PNPPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpitaxialDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •Marking:KA | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
DUALPNPGENERALPURPOSESWITCHINGTRANSISTOR 文件:153.37 Kbytes Page:4 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:431.4 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PNPSmallSignalSurfaceMountTransistors 文件:256.25 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
DualPNPSmallSignalSurfaceMountTransistor 文件:148.79 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
PNPSmallSignalSurfaceMountTransistors 文件:285.08 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Multi-ChipTransistor 文件:240.65 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:174.83 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PNPMulti-ChipTRANSISTOR 文件:176.23 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:123.19 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPTransistors 文件:821.12 Kbytes Page:1 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
40VDUALPNPSMALLSIGNALTRANSISTOR 文件:446.77 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
40VDUALPNPSMALLSIGNALTRANSISTOR 文件:446.77 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:431.4 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:123.19 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPPlastic-EncapsulateTransistors 文件:264.32 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPPlastic-EncapsulateTransistors 文件:235.13 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPPlastic-EncapsulateTransistors 文件:235.13 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPPlastic-EncapsulateTransistors 文件:264.32 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
40VDUALPNPSMALLSIGNALTRANSISTOR 文件:305.74 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:213.58 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
40VDUALPNPSMALLSIGNALTRANSISTOR 文件:305.74 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
40VDUALPNPSMALLSIGNALTRANSISTOR 文件:305.74 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
ACaxialcompactfan 文件:293.06 Kbytes Page:4 Pages | EBMPAPST ebm-papst | |||
TUBEAXIAL 文件:358.74 Kbytes Page:1 Pages | EBMPAPST ebm-papst |
MMDT3906产品属性
- 类型
描述
- 型号
MMDT3906
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
SOT-363 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
|||
长电 |
21+ |
SOT-363 |
50000 |
全新原装正品现货,支持订货 |
|||
DIODES |
2020 |
SOT363 |
9000 |
原装现货只有原装 |
|||
DIODES |
2024 |
SOT-363 |
16478 |
原装现货,欢迎咨询 |
|||
PANJIT |
22+ |
SOT-363 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
Micro Commercial Co |
24+ |
SOT-563,SOT-666 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
DIODES/美台 |
21+ |
SOT-363-6 |
60000 |
绝对原装正品现货,假一罚十 |
|||
进口 |
23+ |
进口原装 |
8811 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
DIODES |
24+ |
SOT-363 |
24000 |
只做原装 有挂有货 假一赔十 |
|||
PANJIT |
22+ |
原厂封装 |
3000 |
特价 25条/百分之百原装现货 |
MMDT3906规格书下载地址
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MMDT3906数据表相关新闻
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深圳市大唐盛世半导体有限公司手机:17727572380。电话:0755-83226739QQ:626839837。微信号:15096137729
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2019-12-3MMDJ-M65608EV-30MQ
AD9642BCPZ-250 AD9650BCPZ-25 AD9640ABCPZ-150 AD9643BCPZ-250 AD9162BBCA AD9251BCPZ-65 AD9640ABCPZ-105 AD9854ASVZ HMCAD1520TR HMC1020LP4ETR HMC1010LP4ETR HMC1097LP4ETR ADSP-TS201SABP-060 ADSP-TS201SABP-050 5962-8770002EA 5962-8777101MCA 5962-8948102VX 5962-8982502PA 5962-9078501MLA
2019-11-30MMDJ-65608EV-30MQ静态随机存取存储器
制造商:Microchip 产品种类:静态随机存取存储器 存储容量:128kbit 访问时间:30ns 电源电压-最大:5.5V 电源电压-最小:4.5V 电源电流—最大值:110mA 最小工作温度:-55C 最大工作温度:+125C 安装风格:SMD/SMT 封装/箱体:Flatpack-32 数据速率:SDR 类型:Asynchronous 商标
2019-11-29
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