Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

Schottky Barrier Diode

FEATURES ● Low reverse leakage—IR=200nA(Max.). ● Very Low Capacitance—1.0pF @20V. ● Extremely Low minority carrier lifetime. ● High reverse leakage—70V(min.) APPLICATIONS ● For high-efficiency UHF and VHF detector applications.

Schottky Barrier Diode

FEATURES ● Low reverse leakage—IR=200nA(Max.). ● Very Low Capacitance—1.0pF @20V. ● Extremely Low minority carrier lifetime. ● High reverse leakage—70V(min.) APPLICATIONS ● For high-efficiency UHF and VHF detector applications.

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

Schottky Barrier Diodes

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Schottky Barrier Diode

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肖特基二极管 UHF 70 V

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance – 1.0 pF @ 20 V • Low Reverse Leakage – 200 nA (max)

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

Schottky Barrier Diodes

文件：228.52 Kbytes Page：3 Pages

Schottky Barrier Diode

封装/外壳：SC-76，SOD-323 包装：散装 描述：DIODE SCHOTTKY 70V SOD323 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Diode

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Single Band LNA and Mixer FEIC

Introduction The MC13770 is a single band front-end IC designed for wireless receiver applications. It contains a low noise LNA and a high linearity mixer. The LNA is integrated with a bypass switch to preserve input intercept performance. The device is fabricated using Freescales Advanced RF BiC

Miniature connector

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Single In-Line Conformal

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Color Monitor

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Waveguide to Coaxial Adapter

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