DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. Th

Power MOSFET 20V 3A 90 mOhm Dual N-Channel SO-8

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life\n• Logic Level Gate DriveCan Be Driven by Logic ICs\n• Miniature SO-8 Surface Mount PackageSaves Board Space\n• Diode Is Characterized for Use In Bridge Circuits\n• Diode Exhibits High Speed, With Soft Recovery\n• IDSS Specified;

Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL

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Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL

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TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR

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SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM

Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ene

N?묬hannel Power MOSFET

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20V N?묬hannel MOSFET

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