Silicon Planar Low Noise Zener Diodes.

VZ Range 2.4 to 6.2V Power Dissipation 350mW Features • Silicon Planar Low Noise Zener Diodes. • 350mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 Tolerance on VZ • High temperature soldering guaranteed: 250˚C/10 seconds at term

Small Signal Zener Diodes

AEC-Q101 qualified

FEATURES • Silicon planar low noise Zener diodes • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • ± 5 tolerance on VZ • High temperature soldering guaranteed: 260 °C/4 x 10 s at terminals • AEC-Q101 qualified available  (part number

Small Signal Zener Diodes

FEATURES • Silicon planar low noise Zener diodes • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 tolerance on VZ • High temperature soldering guaranteed: 260 °C/4 x 10 s at terminals • AEC-Q101 qualified • Compliant to RoHS Direct

Small Signal Zener Diodes

FEATURES • Silicon planar low noise Zener diodes • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 tolerance on VZ • High temperature soldering guaranteed: 260 °C/4 x 10 s at terminals • AEC-Q101 qualified • Compliant to RoHS Direct

Small Signal Zener Diodes

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE ZENER 3.9V 350MW SOT23-3 分立半导体产品 二极管 - 齐纳 - 单

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE ZENER 3.9V 350MW SOT23-3 分立半导体产品 二极管 - 齐纳 - 单

稳压二极管 3.9 Volt 0.225W 5% AUTO

Small Signal Zener Diodes

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High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

N and P-Channel Enhancement Mode Power MOSFET

Description The 4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =6.4A RDS(ON)

Relampable Indicator Light

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VHB?줥apes

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VHB Tape - Specialty Tapes

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