SURFACE MOUNT PIN DIODE

VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage (200V min) • Very low series resistance at 100MHz (0.7Ω typical@ IF=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @VR=20V) • Surface mount package ideally suited for autmat

SURFACE MOUNT PIN DIODE

Silicon Pin Diode

Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial requirements. They are also ava

High Voltage Silicon Pin Diodes

High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial requirements. Th

SURFACE MOUNT PIN DIODE

VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage (200V min) • Very low series resistance at 100MHz (0.7Ω typical@ IF=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @VR=20V) • Surface mount package ideally suited for autmat

SURFACE MOUNT PIN DIODE

VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage (200V min) • Very low series resistance at 100MHz (0.7Ω typical@ IF=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @VR=20V) • Surface mount package ideally suited for autmat

SURFACE MOUNT PIN DIODE

VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage (200V min) • Very low series resistance at 100MHz (0.7Ω typical@ IF=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @VR=20V) • Surface mount package ideally suited for autmat

SURFACE MOUNT PIN DIODE

VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage (200V min) • Very low series resistance at 100MHz (0.7Ω typical@ IF=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @VR=20V) • Surface mount package ideally suited for autmat

High Voltage Silicon Pin Diodes

文件：59.55 Kbytes Page：4 Pages

包装：卷带（TR） 描述：DIODE TUNING SS 200V SOT23 分立半导体产品 二极管 - 射频

High Voltage Silicon Pin Diodes

High Voltage Silicon Pin Diodes

文件：59.55 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：RF DIODE PIN 200V 200MW SOT23-3 分立半导体产品 二极管 - 射频

High Voltage Silicon Pin Diodes

文件：59.55 Kbytes Page：4 Pages

High Voltage Silicon Pin Diodes

文件：121.13 Kbytes Page：3 Pages

High Voltage Silicon Pin Diodes

High Voltage Silicon Pin Diodes

文件：121.13 Kbytes Page：3 Pages

TYPE N BULKHEAD JACK, REAR MOUNT

ELECTRICAL: IMPEDANCE: 50 OHMS VOLTAGE RATING: 1500 VOLTS PEAK FREQUENCY RANGE: DC ~ 3 GHz DIELECTRIC WITHSTANDING VOLTAGE: 2500 VOLTS RMS DURABILITY: > 500 CYCLE CABLE RETENTION: > 40 POUNDS PULL MISCELLANEOUS: APPLICATION: LMR195, RG58 CABLE. COMPONENTS SHALL BE INDIVIDUALLY PACKAGED

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：91.45 Kbytes Page：8 Pages

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：142.46 Kbytes Page：10 Pages

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：141.72 Kbytes Page：8 Pages

Precision Potentiometer

文件：189.45 Kbytes Page：1 Pages