SOT-23-3L Plastic-Encapsulate Transistors

SOT-23-3L Plastic-Encapsulate Transistors(PNP) FEATURES Power dissipation PCM : 0.35 W （Tamb=25℃） Collector current ICM :-0.2 A Collector-base voltage V(BR)CBO: -400 V Operating and storage junction temperature range TJ，Tstg: -55℃to +150℃

High-Voltage PNP Transistor Surface Mount

High-Voltage PNP Transistor Surface Mount P/b Lead(Pb)-Free

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC(MAX)=350mW * Low Collector-Emitter Saturation Voltage APPLICATIONS * Telephone Switching * High Voltage Switch

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain.

Epitaxial Transistor

PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor FEATURES • High Voltage Transistor

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES  High Breakdown Voltage MARKING:4D

PNP Silicon High Voltage Transistor

Features • Surface Mount SOT-23 Package • Capable of 350mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: 4D

Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 200 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP High Voltage Transistor

■ FEATURES PNP High Voltage Transistor

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( PNP ) Features ● High Breakdown Voltage

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.35 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High voltage, low saturation voltage. Applications High voltage control circuit.

PNP Transistors

■ Features ● High Breakdown Voltage ● Complement to MMBTA44

PNP Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMBTA44 • Power Dissipation of 350mW • High Stability and High Reliability

PNP EPITAXIAL PLANAR TRANSISTOR

PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. Description The MMBTA94 is designed for application that requires high voltage. Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to MMBTA44

Plastic -Encapsulate Transistors

FEATURES  High Breakdown Voltage

PNP Plastic-Encapsulate Transistors

FEATURES Epoxy meets UL-94 V-0 flammability rating Power Dissipation of 350mW High Stability and High Reliability Complementary to MMBTA44

SMD High Voltage PNP Transistors

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PNP Transistors

文件：1.2082 Mbytes Page：2 Pages

PNP Transistor

文件：613.75 Kbytes Page：3 Pages

PNP Transistors

文件：1.80668 Mbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：117.37 Kbytes Page：3 Pages

PNP Transistor

晶体三极管

TRANSISTOR(PNP)

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC(MAX)=350mW * Low Collector-Emitter Saturation Voltage APPLICATIONS * Telephone Switching * High Voltage Switch

PNP Transistors

■ Features ● High Breakdown Voltage ● Complement to MMBTA44

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC(MAX)=350mW * Low Collector-Emitter Saturation Voltage APPLICATIONS * Telephone Switching * High Voltage Switch

PNP EPITAXIAL PLANAR TRANSISTOR

Description The MMBTA94LT1 is designed for application that requires high voltage. Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to MMBTA94LT1

High-Voltage PNP Transistor Surface Mount

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HIGH VOLTAGE TRANSISTOR

文件：117.37 Kbytes Page：3 Pages

Epitaxial Transistor

文件：273.86 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：132.42 Kbytes Page：3 Pages

PNP Transistors

文件：1.2082 Mbytes Page：2 Pages

PNP TRANSISTOR

文件：131.1 Kbytes Page：1 Pages

Surface mount High Voltage Transistors

文件：107.23 Kbytes Page：2 Pages

PNP Transistors

文件：1.80668 Mbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：117.37 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：117.37 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：132.42 Kbytes Page：3 Pages

PNP Transistors

文件：1.2082 Mbytes Page：2 Pages

PNP Transistors

文件：1.80668 Mbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：117.37 Kbytes Page：3 Pages

PNP Transistors

文件：2.17213 Mbytes Page：3 Pages