SOT-23-3L Plastic-Encapsulate Transistors

[Dongguan Pingjingsemi Technology Co., Ltd,] Features ● For High Voltage Switching and Amplifier Applications.

High-Voltage NPN Transistor Surface Mount

High-Voltage NPN Transistor Surface Mount P/b Lead(Pb)-Free

SOT-23-3L Plastic-Encapsulate Transistors

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.35 W （ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 400 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) * Collector current up to 300mA * Complement to UTC MMBTA94/93 * Power Dissipation: PD(max)=350mW

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE 400 Volts POWER 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current IC = 300mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Appr

Epitaxial Transistor

400V, 0.2A NPN Silicon Epitaxial Transistor FEATURES • High Voltage Transistor

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Collector Power Dissipation : PC=350mW.

Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 200 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

TRANSISTOR(NP)

FEATURES ● High Collector-Emitter Voltage ● Complement to MMBTA94

NPN Silicon High Voltage Transistor 350mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Surface Mount SOT-23 Package • 150 °C Junction Temperature • Halogen free available upon request by adding

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MMBTA94 is recommended. On special request, these transistors can be manufactured

NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. Description The MMBTA44 is designed for application that requires high voltage. Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to MMBTA94

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.35 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MMBTA94 is recommended. On special request, these transistors can be manufactu

NPN Transistors

■ Features ● High Collector-Emitter Voltage ● Complement to MMBTA94

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High voltage, Low saturation voltage. Applications High voltage control circuit.

SOT-23 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial planar Transistor

NPN Silicon Epitaxial planar Transistor for high voltage switching and amplifier applications.

NPN High Voltage Transistor

■ FEATURES NPN High Voltage Transistor

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High Collector-Emitter Voltage ● Complement to MMBTA94

NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) * Collector current up to 300mA * Complement to UTC MMBTA94/93 * Power Dissipation: PD(max)=350mW

Plastic-Encaps ulate Transistors

FEATURES  High Collector-Emitter Voltage  Complement to MMBTA94

NPN Plastic-Encapsulate Transistors

FEATURES Epoxy meets UL-94 V-0 flammability rating Power Dissipation of 350mW High Stability and High Reliability Complementary to MMBTA94

TRANSISTOR (NPN)

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NPN Transistors

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HIGH VOLTAGE TRANSISTORS

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NPN Silicon Epitaxial Transistor

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NPN Plastic-Encapsulate Transistors

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SMD High Voltage NPN Transistors

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NPN Silicon High Voltage Transistor 350mW

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NPN Transistors

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NPN Transistor

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 400V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

小信号双极型晶体管

晶体管

Transistor

HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) * Collector current up to 300mA * Complement to UTC MMBTA94/93 * Power Dissipation: PD(max)=350mW

General Purpose Transistor

General Purpose Transistor Features - High Collector-emitter voltage. - Ultra small surface mount package. Mechanical data - Case: SOT-23 Standard package, molded plastic. - Mounting position: Any. - Weight: 0.0078 grams(approx.). - Terminals: Solderable per MIL-STD-750, method 2026.

NPN Transistors

■ Features ● High Collector-Emitter Voltage ● Complement to MMBTA94

HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) * Collector current up to 300mA * Complement to UTC MMBTA94/93 * Power Dissipation: PD(max)=350mW

NPN Transistors

■ Features ● High Breakdown Voltage ● Complement to MMBTA44

NPN HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTORS

文件：201.32 Kbytes Page：4 Pages

NPN Silicon Epitaxial Transistor

文件：454.62 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTORS

文件：221.12 Kbytes Page：4 Pages

NPN Silicon High Voltage Transistor 350mW

文件：305.94 Kbytes Page：3 Pages

NPN Transistors

文件：1.13654 Mbytes Page：2 Pages

Surface mount High Voltage Transistors

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NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR

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NPN Transistors

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HIGH VOLTAGE TRANSISTORS

文件：201.32 Kbytes Page：4 Pages

Plastic-Encapsulate Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE TRANSISTORS

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HIGH VOLTAGE TRANSISTORS

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HIGH VOLTAGE TRANSISTORS

文件：221.12 Kbytes Page：4 Pages

NPN Transistors

文件：1.69287 Mbytes Page：2 Pages

NPN Transistors

文件：1.13654 Mbytes Page：2 Pages

HIGH VOLTAGE TRANSISTORS

文件：201.32 Kbytes Page：4 Pages