NPN High Voltage Amplifier

NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics.

High Voltage Transistors

NPN Silicon Type Features This device is designed for application as a video output to drive color CRT and other high voltage applications

Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reele

NPN High Voltage Amplifier

FEATURES ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. APPLICATIONS ● As a video output to driver color CRT and other high Voltage application.

NPN Silicon High Voltage Transistors

NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended.

High Voltage Transistors

Features ● NPN Silicon

0.5A , 200V NPN Plastic Encapsulated Transistor

FEATURES • High Voltage Application • Telephone Application • Complementary to MMBTA93

TRANSISTOR(NPN)

FEATURES ● High Voltage Application ● Telephone Application ● Complementary to MMBTA93

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE, TELEPHONE)

HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.

NPN Silicon High Voltage Transistor

Features • Surface Mount SOT-23 Package • Capable of 300mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: M1E, ABX • Halogen free a

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Voltage Application Telephone Application Complementary to MMBTA93

NPN Silicon High Voltage Transistors

NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended.

NPN Silicon General Purpose Transistors

VOLTAGE 300 Volts CURRENT 0.5 Ampers FEATURES • High current capacity in compact package.IC =0.5 A. • Epitaxial planar type. • Pb-Free Package is available.

NPN High Voltage Transistor

FEATURES NPN High Voltage Transistor

NPN Transistors

Features ● For switching and amplifier applications. ● High voltage

NPN High Voltage Amplifier

FEATURES ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. APPLICATIONS ● As a video output to driver color CRT and other high Voltage application.

HighVoltageTransistors

High Voltage Transistors ● We declare that the material of product compliance with RoHS requirements.

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

NPN Silicon

NPN Silicon

TRANSISTOR(NPN)

FEATURES  High Voltage Application  Telephone Application  Complementary to MMBTA93

HIGH VOLTAGE TRANSISTOR

DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Voltage Application ● Telephone Application ● Complementary to MMBTA93

HIGH VOLTAGE TRANSISTOR NPN SILICON

High Voltage Transistor NPN Silicon

NPN (HIGH VOLTAGE TRANSISTOR)

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小信号双极型晶体管

Bipolar Transistor

Transistor

NPN Silicon High Voltage Transistor

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NPN Plastic-Encapsulate Transistors

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NPN High Voltage Amplifier

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High-Voltage NPN Transistor Surface Mount

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High Voltage Transistors

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HIGH VOLTAGE TRANSISTOR

DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW

High Voltage Transistors

High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

HIGH VOLTAGE TRANSISTOR

DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW

High Voltage Transistors

High Voltage Transistors NPN Silicon

High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon

NPN High Voltage Amplifier

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NPN Silicon High Voltage Transistor

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HIGH VOLTAGE TRANSISTOR

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NPN Plastic Encapsulated Transistor

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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High Voltage Transistors

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High Voltage Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：TRANS NPN 200V 0.05A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage Transistors

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High Voltage Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：TRANS NPN 200V 0.05A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage Transistors

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