MMBTA13晶体管资料
MMBTA13别名：MMBTA13三极管、MMBTA13晶体管、MMBTA13晶体三极管
MMBTA13生产厂家：美国摩托罗拉半导体公司
MMBTA13制作材料：Si-N+Darl
MMBTA13性质：低频或音频放大 （LF）
MMBTA13封装形式：贴片封装
MMBTA13极限工作电压：
MMBTA13最大电流允许值：0.5A
MMBTA13最大工作频率：<1MHZ或未知
MMBTA13引脚数：3
MMBTA13最大耗散功率：
MMBTA13放大倍数：
MMBTA13图片代号：H-15
MMBTA13vtest：0
MMBTA13htest：999900
- MMBTA13atest：0.5
MMBTA13wtest：0
MMBTA13代换 MMBTA13用什么型号代替：BCV27,BCV47,PMBTA13,SMBTA13,
MMBTA13价格
参考价格：￥0.1548
型号：MMBTA13 品牌：Fairchild 备注：这里有MMBTA13多少钱，2026年最近7天走势，今日出价，今日竞价，MMBTA13批发/采购报价，MMBTA13行情走势销售排行榜，MMBTA13报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA13 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63, MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain | TRSYS Transys Electronics |   | |
MMBTA13 | 丝印代码：1M；NPN Darlington Transistor NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. | FAIRCHILD 仙童半导体 | | |
MMBTA13 | 丝印代码：K2D；NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | | |
MMBTA13 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR) GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | |
MMBTA13 | NPN Darlington Amplifier Transistor Features • Operating And Storage Temperatures –55°C to +150°C • RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) • Capable of 225mWatts of Power Dissipation • Halogen free available upon request by adding suffix -HF • Marking: MMBTA13 ---K2D; MMBTA14 ---K3D • Lead Free Finish/RoHS Co | MCC | | |
MMBTA13 | NPN Silicon Darlington Transistors NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage | INFINEON 英飞凌 | | |
MMBTA13 | TRANSISTOR竊뉿PN竊 TRANSISTOR（ NPN） FEATURES Power dissipation PCM : 0.3W（ Tamb=25℃） Collector current ICM: 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150 | JIANGSU 长电科技 | | |
MMBTA13 | NPN Transistors Darlington Amplifier NPN Transistors Darlington Amplifier | WEITRON | | |
MMBTA13 | DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW | UTC 友顺 | | |
MMBTA13 | 丝印代码：K2D；NPN General Purpose Transistor FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain APPLICATIONS ● Ideal for medium power amplification and switching. | BILIN 银河微电 | | |
MMBTA13 | NPN Silicon Epitaxial Planar Darlington Transistor NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package | SEMTECH_ELEC 先之科半导体 | | |
MMBTA13 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • Darlington Amplifier | DAYA 大亚电器 | | |
MMBTA13 | TRANSISTOR (NPN) FEATURES • Darlington Amplifier | HTSEMI 金誉半导体 | | |
MMBTA13 | Darlington Amplifier Transistor NPN Silicon FEATURES Power dissipation PCM : 0.3W（Tamb=25℃） Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 | SECOS 喜可士 | | |
MMBTA13 | Silicon NPN transistor in a SOT-23 Plastic Package Featuress Silicon NPN transistor in a SOT-23 Plastic Package. Features High current gain. Applications Applications requiring extremely high current gain device designed. | FOSHAN 蓝箭电子 | | |
MMBTA13 | 丝印代码：K2D；NPN Darlington Amplifier Transistor FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain. APPLICATIONS ● Ideal for medium power amplification and switching. | LUGUANG 鲁光电子 | | |
MMBTA13 | 丝印代码：1M；DarlingtonAmplifier Transistors Darlington Amplifier Transistors ● We declare that the material of product compliance with RoHS requirements. | FS | | |
MMBTA13 | Plastic-Encapsulate Transistors FEATURES • Darlington Amplifier | MAKOSEMI 美科半导体 | | |
MMBTA13 | Plastic-Encapsulate Transistors FEATURES • Darlington Amplifier | HOTTECH 合科泰 | | |
MMBTA13 | Power dissipation FEATURES Power dissipation PCM : 0.3W（Tamb=25℃） Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
MMBTA13 | Darlington Amplifier FEATURES • Darlington Amplifier | MAKOSEMI 美科半导体 | | |
MMBTA13 | NPN Silicon Darlington Transistors ● High DC current gain\n● High collector current\n● Low collector-emitter saturation voltage | INFINEON 英飞凌 | | |
MMBTA13 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 30V 1.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MMBTA13 | Darlington Amplifier Transistor NPN Silicon 文件：885.04 Kbytes Page：3 Pages | SECOS 喜可士 | | |
MMBTA13 | TRANSISTOR (NPN) 文件：770.16 Kbytes Page：4 Pages | JIANGSU 长电科技 | | |
MMBTA13 | DARLINGTON TRANSISTOR 文件：77.6 Kbytes Page：2 Pages | UTC 友顺 | | |
MMBTA13 | NPN Darlington Amplifier Transistor 文件：277.27 Kbytes Page：5 Pages | MCC | | |
MMBTA13 | 丝印代码：K2D；NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：120.01 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MMBTA13 | 丝印代码：K2D；NPN Darlington Amplifier Transistor 文件：133.59 Kbytes Page：3 Pages | BILIN 银河微电 | | |
MMBTA13 | NPN Darlington Amplifier Transistor 文件：265.16 Kbytes Page：5 Pages | MCC | | |
MMBTA13 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件：300.66 Kbytes Page：6 Pages | RECTRON 丽正 | | |
MMBTA13 | 丝印代码：K2D；NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：112.84 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MMBTA13 | NPN Darlington Amplifier Transistor 文件：154.57 Kbytes Page：5 Pages | MCC | | |
MMBTA13 | NPN (DARLINGTON AMPLIFIER TRANSISTOR) 文件：26.88 Kbytes Page：1 Pages | SAMSUNG 三星 | | |
NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | | ||
GENERAL PURPOSE TRANSISTORS DARLINGTON AMPLIFIER TRANSISTORS DESCRIPTION The MBTA13~ MBTA14 are available in SOT 23 p ackage. FEATURES Available in SOT 23 p ackage | AITSEMI 创瑞科技 | | ||
Darlington Amplifier Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
Darlington Amplifier Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Darlington Amplifier Transistors(NPN Silicon) NPN Silicon | LRC 乐山无线电 | | ||
Darlington Amplifier Transistors Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | ||
Darlington Amplifier Transistors Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | ||
Darlington Amplifier Transistors Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | ||
Darlington Amplifier Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
NPN Darlington Amplifier Transistor 文件：154.57 Kbytes Page：5 Pages | MCC | | ||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：112.84 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
NPN Darlington Amplifier Transistor 文件：265.16 Kbytes Page：5 Pages | MCC | | ||
DARLINGTON TRANSISTOR 文件：77.6 Kbytes Page：2 Pages | UTC 友顺 | | ||
NPN Darlington Amplifier Transistor 文件：133.59 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
TRANSISTOR (NPN) 文件：770.16 Kbytes Page：4 Pages | JIANGSU 长电科技 | | ||
DARLINGTON TRANSISTOR 文件：127.49 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：120.65 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
Darlington Amplifier Transistor NPN Silicon 文件：885.04 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
NPN Darlington Amplifier Transistor 文件：277.27 Kbytes Page：5 Pages | MCC | | ||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：120.01 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
30V,0.3A,General Purpose NPN Bipolar Transistor | GALAXY 银河微电 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN DARL 30V 0.3A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：120.01 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件：112.84 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
DARLINGTON TRANSISTOR 文件：127.49 Kbytes Page：3 Pages | UTC 友顺 | | ||
DARLINGTON TRANSISTOR 文件：77.6 Kbytes Page：2 Pages | UTC 友顺 | |
MMBTA13产品属性
- 类型
描述
- 电流 - 集电极（Ic）（最大值）：
1.2A
- 电压 - 集射极击穿（最大值）：
30V
- 不同 Ib，Ic 时的 Vce 饱和值（最大值）：
1.5V @ 100µA，100mA
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic，Vce 时的 DC 电流增益（hFE）（最小值）：
10000 @ 100mA，5V
- 功率 - 最大值：
350mW
- 频率 - 跃迁：
125MHz
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
表面贴装
- 封装/外壳：
TO-236-3，SC-59，SOT-23-3
- 供应商器件封装：
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi(安森美) |
25+ |
SOT-23-3 |
11580 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
UTC/友顺 |
25+ |
SOT23 |
55000 |
UTC/友顺MMBTA13G-AE3-R即刻询购立享优惠#长期有货 |
|||
INFINEON |
26+ |
SOT-23 |
9526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ON/MOT |
23+ |
N/A |
5700 |
绝对全新原装!现货!特价!请放心订购! |
|||
ON |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON/安森美 |
25+ |
SOT-23 |
25000 |
只做进口原装假一罚百 |
|||
CJ/长电 |
2450+ |
SOT-23 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CJ/长电 |
21+ |
SOT-23 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
MMBTA13芯片相关品牌
MMBTA13规格书下载地址
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MMBTA13数据表相关新闻
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