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MMBTA13晶体管资料
MMBTA13别名:MMBTA13三极管、MMBTA13晶体管、MMBTA13晶体三极管
MMBTA13生产厂家:美国摩托罗拉半导体公司
MMBTA13制作材料:Si-N+Darl
MMBTA13性质:低频或音频放大 (LF)
MMBTA13封装形式:贴片封装
MMBTA13极限工作电压:
MMBTA13最大电流允许值:0.5A
MMBTA13最大工作频率:<1MHZ或未知
MMBTA13引脚数:3
MMBTA13最大耗散功率:
MMBTA13放大倍数:
MMBTA13图片代号:H-15
MMBTA13vtest:0
MMBTA13htest:999900
- MMBTA13atest:0.5
MMBTA13wtest:0
MMBTA13代换 MMBTA13用什么型号代替:BCV27,BCV47,PMBTA13,SMBTA13,
MMBTA13价格
参考价格:¥0.1548
型号:MMBTA13 品牌:Fairchild 备注:这里有MMBTA13多少钱,2025年最近7天走势,今日出价,今日竞价,MMBTA13批发/采购报价,MMBTA13行情走势销售排行榜,MMBTA13报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA13 | NPN Darlington Transistor NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. | Fairchild 仙童半导体 | ||
MMBTA13 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | ||
MMBTA13 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR) GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. | KEC KEC(Korea Electronics) | ||
MMBTA13 | NPN Darlington Amplifier Transistor Features • Operating And Storage Temperatures –55°C to +150°C • RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) • Capable of 225mWatts of Power Dissipation • Halogen free available upon request by adding suffix -HF • Marking: MMBTA13 ---K2D; MMBTA14 ---K3D • Lead Free Finish/RoHS Co | MCC | ||
MMBTA13 | NPN Silicon Darlington Transistors NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage | Infineon 英飞凌 | ||
MMBTA13 | TRANSISTOR竊뉿PN竊 TRANSISTOR( NPN) FEATURES Power dissipation PCM : 0.3W( Tamb=25℃) Collector current ICM: 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150 | JIANGSU 长电科技 | ||
MMBTA13 | NPN Transistors Darlington Amplifier NPN Transistors Darlington Amplifier | WEITRON | ||
MMBTA13 | DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW | UTC 友顺 | ||
MMBTA13 | NPN General Purpose Transistor FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain APPLICATIONS ● Ideal for medium power amplification and switching. | BILIN 银河微电 | ||
MMBTA13 | NPN Silicon Epitaxial Planar Darlington Transistor NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package | SEMTECH_ELEC 先之科半导体 | ||
MMBTA13 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • Darlington Amplifier | DAYA 大亚电器 | ||
MMBTA13 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63, MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain | TRSYS Transys Electronics | ||
MMBTA13 | TRANSISTOR (NPN) FEATURES • Darlington Amplifier | HTSEMI 金誉半导体 | ||
MMBTA13 | Darlington Amplifier Transistor NPN Silicon FEATURES Power dissipation PCM : 0.3W(Tamb=25℃) Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150 | SECOS 喜可士 | ||
MMBTA13 | Plastic-Encapsulate Transistors FEATURES • Darlington Amplifier | MAKOSEMI 美科半导体 | ||
MMBTA13 | Silicon NPN transistor in a SOT-23 Plastic Package Featuress Silicon NPN transistor in a SOT-23 Plastic Package. Features High current gain. Applications Applications requiring extremely high current gain device designed. | FOSHAN 蓝箭电子 | ||
MMBTA13 | NPN Darlington Amplifier Transistor FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain. APPLICATIONS ● Ideal for medium power amplification and switching. | LUGUANG 鲁光电子 | ||
MMBTA13 | DarlingtonAmplifier Transistors Darlington Amplifier Transistors ● We declare that the material of product compliance with RoHS requirements. | FS | ||
MMBTA13 | Plastic-Encapsulate Transistors FEATURES • Darlington Amplifier | HOTTECH 合科泰 | ||
MMBTA13 | Darlington Amplifier FEATURES • Darlington Amplifier | MAKOSEMI 美科半导体 | ||
MMBTA13 | Power dissipation FEATURES Power dissipation PCM : 0.3W(Tamb=25℃) Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
MMBTA13 | DARLINGTON TRANSISTOR 文件:77.6 Kbytes Page:2 Pages | UTC 友顺 | ||
MMBTA13 | NPN Darlington Amplifier Transistor 文件:277.27 Kbytes Page:5 Pages | MCC | ||
MMBTA13 | NPN Darlington Amplifier Transistor 文件:133.59 Kbytes Page:3 Pages | BILIN 银河微电 | ||
MMBTA13 | Darlington Amplifier Transistor NPN Silicon 文件:885.04 Kbytes Page:3 Pages | SECOS 喜可士 | ||
MMBTA13 | TRANSISTOR (NPN) 文件:770.16 Kbytes Page:4 Pages | JIANGSU 长电科技 | ||
MMBTA13 | NPN Darlington Amplifier Transistor 文件:265.16 Kbytes Page:5 Pages | MCC | ||
MMBTA13 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件:300.66 Kbytes Page:6 Pages | RECTRON 丽正国际 | ||
MMBTA13 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:120.01 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MMBTA13 | NPN (DARLINGTON AMPLIFIER TRANSISTOR) 文件:26.88 Kbytes Page:1 Pages | Samsung 三星 | ||
MMBTA13 | NPN Darlington Amplifier Transistor 文件:154.57 Kbytes Page:5 Pages | MCC | ||
MMBTA13 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:112.84 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MMBTA13 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN DARL 30V 1.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
MMBTA13 | NPN Silicon Darlington Transistors | Infineon 英飞凌 | ||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | |||
GENERAL PURPOSE TRANSISTORS DARLINGTON AMPLIFIER TRANSISTORS DESCRIPTION The MBTA13~ MBTA14 are available in SOT 23 p ackage. FEATURES Available in SOT 23 p ackage | AITSEMI 创瑞科技 | |||
Darlington Amplifier Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
Darlington Amplifier Transistors NPN Silicon | Motorola 摩托罗拉 | |||
Darlington Amplifier Transistors(NPN Silicon) NPN Silicon | LRC 乐山无线电 | |||
Darlington Amplifier Transistors Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Darlington Amplifier Transistors Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Darlington Amplifier Transistors Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Darlington Amplifier Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
NPN Darlington Amplifier Transistor 文件:154.57 Kbytes Page:5 Pages | MCC | |||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:112.84 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
NPN Darlington Amplifier Transistor 文件:265.16 Kbytes Page:5 Pages | MCC | |||
DARLINGTON TRANSISTOR 文件:77.6 Kbytes Page:2 Pages | UTC 友顺 | |||
TRANSISTOR (NPN) 文件:770.16 Kbytes Page:4 Pages | JIANGSU 长电科技 | |||
NPN Darlington Amplifier Transistor 文件:133.59 Kbytes Page:3 Pages | BILIN 银河微电 | |||
Darlington Amplifier Transistor NPN Silicon 文件:885.04 Kbytes Page:3 Pages | SECOS 喜可士 | |||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:120.65 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
DARLINGTON TRANSISTOR 文件:127.49 Kbytes Page:3 Pages | UTC 友顺 | |||
NPN Darlington Amplifier Transistor 文件:277.27 Kbytes Page:5 Pages | MCC | |||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:120.01 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
30V,0.3A,General Purpose NPN Bipolar Transistor | GALAXY 银河微电 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN DARL 30V 0.3A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | DIODES 美台半导体 | |||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:112.84 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
NPN SURFACE MOUNT DARLINGTON TRANSISTOR 文件:120.01 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
DARLINGTON TRANSISTOR 文件:77.6 Kbytes Page:2 Pages | UTC 友顺 | |||
DARLINGTON TRANSISTOR 文件:127.49 Kbytes Page:3 Pages | UTC 友顺 |
MMBTA13产品属性
- 类型
描述
- 型号
MMBTA13
- 功能描述
达林顿晶体管 NPN Transistor Darlington
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
UTC/友顺 |
25+ |
SOT23 |
55000 |
UTC/友顺MMBTA13G-AE3-R即刻询购立享优惠#长期有货 |
|||
长电 |
0733+ |
SOT-23 |
2900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/MOT |
23+ |
N/A |
5700 |
绝对全新原装!现货!特价!请放心订购! |
|||
ON |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ON/安森美 |
23+ |
SOT-23 |
25000 |
只做进口原装假一罚百 |
|||
Diodes(美台) |
24+ |
SOT-23 |
10048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
CJ/长电 |
21+ |
SOT-23 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
长电 |
25+23+ |
SOT-23 |
24573 |
绝对原装正品全新进口深圳现货 |
MMBTA13规格书下载地址
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