MMBTA13晶体管资料

  • MMBTA13别名:MMBTA13三极管、MMBTA13晶体管、MMBTA13晶体三极管

  • MMBTA13生产厂家:美国摩托罗拉半导体公司

  • MMBTA13制作材料:Si-N+Darl

  • MMBTA13性质:低频或音频放大 (LF)

  • MMBTA13封装形式:贴片封装

  • MMBTA13极限工作电压

  • MMBTA13最大电流允许值:0.5A

  • MMBTA13最大工作频率:<1MHZ或未知

  • MMBTA13引脚数:3

  • MMBTA13最大耗散功率

  • MMBTA13放大倍数

  • MMBTA13图片代号:H-15

  • MMBTA13vtest:0

  • MMBTA13htest:999900

  • MMBTA13atest:0.5

  • MMBTA13wtest:0

  • MMBTA13代换 MMBTA13用什么型号代替:BCV27,BCV47,PMBTA13,SMBTA13,

MMBTA13价格

参考价格:¥0.1548

型号:MMBTA13 品牌:Fairchild 备注:这里有MMBTA13多少钱,2025年最近7天走势,今日出价,今日竞价,MMBTA13批发/采购报价,MMBTA13行情走势销售排行榜,MMBTA13报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMBTA13

NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05.

Fairchild

仙童半导体

MMBTA13

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig

DIODES

美台半导体

MMBTA13

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)

GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.

KEC

KEC(Korea Electronics)

MMBTA13

NPN Darlington Amplifier Transistor

Features • Operating And Storage Temperatures –55°C to +150°C • RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) • Capable of 225mWatts of Power Dissipation • Halogen free available upon request by adding suffix -HF • Marking: MMBTA13 ---K2D; MMBTA14 ---K3D • Lead Free Finish/RoHS Co

MCC

MMBTA13

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage

Infineon

英飞凌

MMBTA13

TRANSISTOR竊뉿PN竊

TRANSISTOR( NPN) FEATURES Power dissipation PCM : 0.3W( Tamb=25℃) Collector current ICM: 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150

JIANGSU

长电科技

MMBTA13

NPN Transistors Darlington Amplifier

NPN Transistors Darlington Amplifier

WEITRON

MMBTA13

DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW

UTC

友顺

MMBTA13

NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain APPLICATIONS ● Ideal for medium power amplification and switching.

BILIN

银河微电

MMBTA13

NPN Silicon Epitaxial Planar Darlington Transistor

NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package

SEMTECH_ELEC

先之科半导体

MMBTA13

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Darlington Amplifier

DAYA

大亚电器

MMBTA13

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63, MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain

TRSYS

Transys Electronics

MMBTA13

TRANSISTOR (NPN)

FEATURES • Darlington Amplifier

HTSEMI

金誉半导体

MMBTA13

Darlington Amplifier Transistor NPN Silicon

FEATURES Power dissipation PCM : 0.3W(Tamb=25℃) Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150

SECOS

喜可士

MMBTA13

Plastic-Encapsulate Transistors

FEATURES • Darlington Amplifier

MAKOSEMI

美科半导体

MMBTA13

Silicon NPN transistor in a SOT-23 Plastic Package

Featuress Silicon NPN transistor in a SOT-23 Plastic Package. Features High current gain. Applications Applications requiring extremely high current gain device designed.

FOSHAN

蓝箭电子

MMBTA13

NPN Darlington Amplifier Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain. APPLICATIONS ● Ideal for medium power amplification and switching.

LUGUANG

鲁光电子

MMBTA13

DarlingtonAmplifier Transistors

Darlington Amplifier Transistors ​​​​​​​ ● We declare that the material of product compliance with RoHS requirements.

FS

MMBTA13

Plastic-Encapsulate Transistors

FEATURES • Darlington Amplifier

HOTTECH

合科泰

MMBTA13

Darlington Amplifier

FEATURES • Darlington Amplifier

MAKOSEMI

美科半导体

MMBTA13

Power dissipation

FEATURES Power dissipation PCM : 0.3W(Tamb=25℃) Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

MMBTA13

DARLINGTON TRANSISTOR

文件:77.6 Kbytes Page:2 Pages

UTC

友顺

MMBTA13

NPN Darlington Amplifier Transistor

文件:277.27 Kbytes Page:5 Pages

MCC

MMBTA13

NPN Darlington Amplifier Transistor

文件:133.59 Kbytes Page:3 Pages

BILIN

银河微电

MMBTA13

Darlington Amplifier Transistor NPN Silicon

文件:885.04 Kbytes Page:3 Pages

SECOS

喜可士

MMBTA13

TRANSISTOR (NPN)

文件:770.16 Kbytes Page:4 Pages

JIANGSU

长电科技

MMBTA13

NPN Darlington Amplifier Transistor

文件:265.16 Kbytes Page:5 Pages

MCC

MMBTA13

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件:300.66 Kbytes Page:6 Pages

RECTRON

丽正国际

MMBTA13

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:120.01 Kbytes Page:3 Pages

DIODES

美台半导体

MMBTA13

NPN (DARLINGTON AMPLIFIER TRANSISTOR)

文件:26.88 Kbytes Page:1 Pages

Samsung

三星

MMBTA13

NPN Darlington Amplifier Transistor

文件:154.57 Kbytes Page:5 Pages

MCC

MMBTA13

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:112.84 Kbytes Page:3 Pages

DIODES

美台半导体

MMBTA13

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN DARL 30V 1.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MMBTA13

NPN Silicon Darlington Transistors

Infineon

英飞凌

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig

DIODES

美台半导体

GENERAL PURPOSE TRANSISTORS DARLINGTON AMPLIFIER TRANSISTORS

DESCRIPTION The MBTA13~ MBTA14 are available in SOT 23 p ackage. FEATURES  Available in SOT 23 p ackage

AITSEMI

创瑞科技

Darlington Amplifier Transistors NPN Silicon

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

ONSEMI

安森美半导体

Darlington Amplifier Transistors

NPN Silicon

Motorola

摩托罗拉

Darlington Amplifier Transistors(NPN Silicon)

NPN Silicon

LRC

乐山无线电

Darlington Amplifier Transistors

Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Darlington Amplifier Transistors

Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Darlington Amplifier Transistors

Darlington Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Darlington Amplifier Transistors NPN Silicon

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

ONSEMI

安森美半导体

NPN Darlington Amplifier Transistor

文件:154.57 Kbytes Page:5 Pages

MCC

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:112.84 Kbytes Page:3 Pages

DIODES

美台半导体

NPN Darlington Amplifier Transistor

文件:265.16 Kbytes Page:5 Pages

MCC

DARLINGTON TRANSISTOR

文件:77.6 Kbytes Page:2 Pages

UTC

友顺

TRANSISTOR (NPN)

文件:770.16 Kbytes Page:4 Pages

JIANGSU

长电科技

NPN Darlington Amplifier Transistor

文件:133.59 Kbytes Page:3 Pages

BILIN

银河微电

Darlington Amplifier Transistor NPN Silicon

文件:885.04 Kbytes Page:3 Pages

SECOS

喜可士

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:120.65 Kbytes Page:3 Pages

DIODES

美台半导体

DARLINGTON TRANSISTOR

文件:127.49 Kbytes Page:3 Pages

UTC

友顺

NPN Darlington Amplifier Transistor

文件:277.27 Kbytes Page:5 Pages

MCC

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:120.01 Kbytes Page:3 Pages

DIODES

美台半导体

30V,0.3A,General Purpose NPN Bipolar Transistor

GALAXY

银河微电

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN DARL 30V 0.3A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:112.84 Kbytes Page:3 Pages

DIODES

美台半导体

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

文件:120.01 Kbytes Page:3 Pages

DIODES

美台半导体

DARLINGTON TRANSISTOR

文件:77.6 Kbytes Page:2 Pages

UTC

友顺

DARLINGTON TRANSISTOR

文件:127.49 Kbytes Page:3 Pages

UTC

友顺

MMBTA13产品属性

  • 类型

    描述

  • 型号

    MMBTA13

  • 功能描述

    达林顿晶体管 NPN Transistor Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-10-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SOT-23(TO-236)
7957
原厂订货渠道,支持BOM配单一站式服务
UTC/友顺
25+
SOT23
55000
UTC/友顺MMBTA13G-AE3-R即刻询购立享优惠#长期有货
长电
0733+
SOT-23
2900
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/MOT
23+
N/A
5700
绝对全新原装!现货!特价!请放心订购!
ON
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
ON/安森美
23+
SOT-23
25000
只做进口原装假一罚百
Diodes(美台)
24+
SOT-23
10048
原厂可订货,技术支持,直接渠道。可签保供合同
CJ/长电
21+
SOT-23
30000
百域芯优势 实单必成 可开13点增值税发票
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
长电
25+23+
SOT-23
24573
绝对原装正品全新进口深圳现货

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