NPN General Purpose Amplifier

Features • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12.

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation MPSA06.

EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER)

DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURE • Complementary to MMBTA56.

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBTA55 / MMBTA56) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

NPN Silicon AF Transistor

NPN Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 / MMBTA56 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Driver NPN Transistors

Driver NPN TRANSISTOR P/b Lead(Pb)-Free

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA55 / MMBTA56) Ideal for Medium Power Amplification and Switching

AMPLIFIER TRANSISTOR

AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW

Surface mount general purpose Si-epitaxial planar transistors

NPN Surface mount general purpose Si-epitaxial planar transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN General Purpose Transistor

FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching

Driver Transistors

Features ● Driver transistors. ● NPN silicon.

SMD General Purpose Transistor (NPN)

Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance

NPN Silicon Epitaxial Planar Small Signal Transistor

NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications

NPN Small Signal General Purpose Amplifier Transistors

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA55/MMBTA56) • Ideal for Medium Power Amplification and Switching. • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability ra

NPN AND PNP HIGH VOLTAGE TRANSISTOR

VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives

Plastic-Encapsulate Transistor

Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case with the type designation MPSA06.

DriverTransistors

FEATURES • We declare that the material of product compliance with RoHS requirements.

NPN Silicon Epitaxial planar Transistor

NPN Silicon Epitaxial planar Transistor For switching and amplifier applications.

SMD General Purpose PNP Transistors

• Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Small Signal Transistors (NPN)

Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case with the type designation MPSA06.

SMD High Voltage NPN Transistors

NPN Surface mount general purpose Si-epitaxial planar transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Plastic-Encapsulate Transistors

FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Types Available (MMBTA55 / MMBTA56) ● Ideal for Medium Power Amplification and Switching

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR ( NPN ) Features ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56

NPN General Purpose Transistor

FEATURES ● High breakdown voltage. ● Complementary PNP type available (MMBTA55/MMBTA56). ● Low collector-emitter saturation voltage. APPLICATIONS ● Ideal for medium power amplification and switching.

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

SOT-23 Plastic-Encapsulate Transistors

FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56

TRANSISTOR(NPN)

FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56

SOT-23 Plastic-Encapsulate Transistors

FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56

Single Bipolar Transistor

Feature • For Switching and Amplifier Applications Description Single Bipolar Transistor, NPN, 0.5A, 80V, SOT 23

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Complementary to MMBTA56. Applications Ideal for medium power amplification and switching.

TRANSISTOR(NPN)

FEATURES ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56

EPITAXIAL PLANAR NPN TRANSISTOR

文件：407.07 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 80V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN General Purpose Transistor

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AMPLIFIER TRANSISTOR

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NPN Plastic-Encapsulate Transistors

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SMD High Voltage NPN Transistors

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NPN Small Signal General Purpose Amplifier Transistors

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NPN Silicon AF Transistor

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SMD High Voltage NPN Transistors

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PWM high-efficiency LED driver control IC.

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NPN Small Signal General Purpose Amplifier Transistors

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NPN Silicon AF Transistor Low collector-emitter saturation voltage

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NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Driver NPN Transistors

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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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NPN General Purpose Amplifier

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NPN (DRIVER TRANSISTOR)

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NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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NPN Silicon AF Transistor

MMBTA06: NPN General Purpose Amplifier

SOT-23 Plastic-Encapsulate Transistors

FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56

AMPLIFIER TRANSISTOR

AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW

NPN AND PNP HIGH VOLTAGE TRANSISTOR

NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC= 500mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/95/EC directives.

Driver Transistors

Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

AMPLIFIER TRANSISTOR

AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW

Driver Transistors

Driver Transistors NPN Silicon