MMBTA06晶体管资料
MMBTA06别名：MMBTA06三极管、MMBTA06晶体管、MMBTA06晶体三极管
MMBTA06生产厂家：美国摩托罗拉半导体公司
MMBTA06制作材料：
MMBTA06性质：低频或音频放大 （LF）_通用 （G）
MMBTA06封装形式：
MMBTA06极限工作电压：80V
MMBTA06最大电流允许值：0.5A
MMBTA06最大工作频率：<1MHZ或未知
MMBTA06引脚数：
MMBTA06最大耗散功率：0.3W
MMBTA06放大倍数：
MMBTA06图片代号：NO
MMBTA06vtest：80
MMBTA06htest：999900
- MMBTA06atest：0.5
MMBTA06wtest：0.3
MMBTA06代换 MMBTA06用什么型号代替：3DK30C,
MMBTA06价格
参考价格：￥0.1782
型号：MMBTA06 品牌：Fairchild 备注：这里有MMBTA06多少钱，2026年最近7天走势，今日出价，今日竞价，MMBTA06批发/采购报价，MMBTA06行情走势销售排行榜，MMBTA06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA06 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FEATURES Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA55 / MMBTA56) Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics |   | |
MMBTA06 | NPN General Purpose Amplifier Features • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12. | FAIRCHILD 仙童半导体 | | |
MMBTA06 | Small Signal Transistors (NPN) FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation MPSA06. | GE | | |
MMBTA06 | EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURE • Complementary to MMBTA56. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | |
MMBTA06 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBTA55 / MMBTA56) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability | DIODES 美台半导体 | | |
MMBTA06 | NPN Silicon AF Transistor NPN Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 / MMBTA56 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | INFINEON 英飞凌 | | |
MMBTA06 | Driver NPN Transistors Driver NPN TRANSISTOR P/b Lead(Pb)-Free | WEITRON | | |
MMBTA06 | Surface mount general purpose Si-epitaxial planar transistors NPN Surface mount general purpose Si-epitaxial planar transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | | |
MMBTA06 | NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching | BILIN 银河微电 | | |
MMBTA06 | Driver Transistors Features ● Driver transistors. ● NPN silicon. | KEXIN 科信电子 | | |
MMBTA06 | SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance | TAITRON | | |
MMBTA06 | AMPLIFIER TRANSISTOR AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW | UTC 友顺 | | |
MMBTA06 | NPN Silicon Epitaxial Planar Small Signal Transistor NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications | SEMTECH_ELEC 先之科半导体 | | |
MMBTA06 | NPN Small Signal General Purpose Amplifier Transistors Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA55/MMBTA56) • Ideal for Medium Power Amplification and Switching. • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability ra | MCC | | |
MMBTA06 | NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | |
MMBTA06 | Plastic-Encapsulate Transistor Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case with the type designation MPSA06. | SECOS 喜可士 | | |
MMBTA06 | TRANSISTOR(NPN) FEATURES ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56 | HTSEMI 金誉半导体 | | |
MMBTA06 | 丝印代码：1GM；DriverTransistors FEATURES • We declare that the material of product compliance with RoHS requirements. | FS | | |
MMBTA06 | NPN Silicon Epitaxial planar Transistor NPN Silicon Epitaxial planar Transistor For switching and amplifier applications. | SURGE | | |
MMBTA06 | SMD General Purpose PNP Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | | |
MMBTA06 | Small Signal Transistors (NPN) Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case with the type designation MPSA06. | FCI 富加宜 | | |
MMBTA06 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56 | DGNJDZ 南晶电子 | | |
MMBTA06 | Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Complementary to MMBTA56. Applications Ideal for medium power amplification and switching. | FOSHAN 蓝箭电子 | | |
MMBTA06 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56 | JIANGSU 长电科技 | | |
MMBTA06 | SMD High Voltage NPN Transistors NPN Surface mount general purpose Si-epitaxial planar transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | | |
MMBTA06 | Plastic-Encapsulate Transistors FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Types Available (MMBTA55 / MMBTA56) ● Ideal for Medium Power Amplification and Switching | HOTTECH 合科泰 | | |
MMBTA06 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR ( NPN ) Features ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56 | HDSEMI 海德半导体 | | |
MMBTA06 | 丝印代码：1GM；NPN General Purpose Transistor FEATURES ● High breakdown voltage. ● Complementary PNP type available (MMBTA55/MMBTA56). ● Low collector-emitter saturation voltage. APPLICATIONS ● Ideal for medium power amplification and switching. | LUGUANG 鲁光电子 | | |
MMBTA06 | Low-power pyroelectric infrared sensor signal processing chip Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power | HMSEMI 华之美半导体 | | |
MMBTA06 | 丝印代码：1GM；SOT-23 Plastic-Encapsulate Transistors FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 | DGNJDZ 南晶电子 | | |
MMBTA06 | 丝印代码：1GM；TRANSISTOR(NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 | GWSEMI 唯圣电子 | | |
MMBTA06 | SOT-23 Plastic-Encapsulate Transistors FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 | UMW 友台半导体 | | |
MMBTA06 | Single Bipolar Transistor Feature • For Switching and Amplifier Applications Description Single Bipolar Transistor, NPN, 0.5A, 80V, SOT 23 | MULTICOMP 易络盟 | | |
MMBTA06 | MMBTA06: NPN General Purpose Amplifier NPN通用放大器 该器件设计用于集电极电流达到300 mA的通用放大器应用。 采用工艺33设计。 | ONSEMI 安森美半导体 | | |
MMBTA06 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MMBTA06 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 80V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
MMBTA06 | NPN Silicon AF Transistor | INFINEON 英飞凌 | | |
MMBTA06 | NPN General Purpose Transistor 文件：222.85 Kbytes Page：5 Pages | BILIN 银河微电 | | |
MMBTA06 | AMPLIFIER TRANSISTOR 文件：217.11 Kbytes Page：5 Pages | UTC 友顺 | | |
MMBTA06 | 丝印代码：1GM；NPN Plastic-Encapsulate Transistors 文件：1.41466 Mbytes Page：5 Pages | JINGHENG 晶恒 | | |
MMBTA06 | SMD High Voltage NPN Transistors 文件：127.12 Kbytes Page：2 Pages | DIOTEC 德欧泰克 | | |
MMBTA06 | NPN Small Signal General Purpose Amplifier Transistors 文件：799.69 Kbytes Page：6 Pages | MCC | | |
MMBTA06 | 丝印代码：s1G；NPN Silicon AF Transistor 文件：535.07 Kbytes Page：7 Pages | INFINEON 英飞凌 | | |
MMBTA06 | SMD High Voltage NPN Transistors 文件：133.11 Kbytes Page：2 Pages | DIOTEC 德欧泰克 | | |
MMBTA06 | PWM high-efficiency LED driver control IC. 文件：254.2 Kbytes Page：12 Pages | DIODES 美台半导体 | | |
MMBTA06 | EPITAXIAL PLANAR NPN TRANSISTOR 文件：407.07 Kbytes Page：2 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | |
MMBTA06 | NPN Small Signal General Purpose Amplifier Transistors 文件：670.52 Kbytes Page：4 Pages | MCC | | |
MMBTA06 | NPN Silicon AF Transistor Low collector-emitter saturation voltage 文件：77.26 Kbytes Page：7 Pages | INFINEON 英飞凌 | | |
MMBTA06 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：106.99 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
MMBTA06 | Driver NPN Transistors 文件：249.33 Kbytes Page：4 Pages | WEITRON | | |
MMBTA06 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件：191.9 Kbytes Page：4 Pages | RECTRON 丽正 | | |
MMBTA06 | NPN General Purpose Amplifier 文件：654.8 Kbytes Page：15 Pages | FAIRCHILD 仙童半导体 | | |
MMBTA06 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：112.14 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MMBTA06 | NPN (DRIVER TRANSISTOR) 文件：28.52 Kbytes Page：1 Pages | SAMSUNG 三星 | | |
SOT-23 Plastic-Encapsulate Transistors FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 | DGNJDZ 南晶电子 | | ||
AMPLIFIER TRANSISTOR AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW | UTC 友顺 | | ||
NPN AND PNP HIGH VOLTAGE TRANSISTOR NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC= 500mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/95/EC directives. | PANJIT 強茂 | | ||
Driver Transistors Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
AMPLIFIER TRANSISTOR AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW | UTC 友顺 | | ||
Driver Transistors Driver Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |
MMBTA06产品属性
- 类型
描述
- Compliance：
Pb-freeHalide free
- Status：
Active
- Description：
NPN General Purpose Amplifier
- Polarity：
- Type：
- VCE(sat) Max (V)：
- IC Cont. (A)：
- VCEO Min (V)：
- hFE Min：
- hFE Max：
- fT Min (MHz)：
- PTM Max (W)：
- Package Type：
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-323(SC-70) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON(安森美) |
25+ |
SOT-23(SOT-23-3) |
7589 |
全新原装现货,支持排单订货,可含税开票 |
|||
ON |
2016+ |
SOT23 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
25+ |
SOT23 |
32000 |
FAIRCHILD/仙童全新特价MMBTA06即刻询购立享优惠#长期有货 |
|||
ONSEMI/安森美 |
22+ |
SOT-23 |
900 |
原装认证/挂了就有现货的 |
|||
ON(安森美) |
24+ |
SOT-23(SOT-23-3) |
6761 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
ON |
22+ |
3000 |
ON代理分销,价格优势现货假一罚十 |
||||
ON |
23+ |
SMD |
3500 |
正规渠道,只有原装! |
|||
ON(安森美) |
23+ |
SOT-23(SOT-23-3) |
13137 |
公司只做原装正品,假一赔十 |
|||
ON(安森美) |
24+ |
N/A |
12980 |
原装正品现货支持实单 |
MMBTA06规格书下载地址
MMBTA06参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MMCM2221
- MMBTH81
- MMBTH24
- MMBTH10
- MMBTA94
- MMBTA93
- MMBTA92
- MMBTA70
- MMBTA65
- MMBTA64
- MMBTA63
- MMBTA56
- MMBTA55
- MMBTA517
- MMBTA45
- MMBTA44
- MMBTA43
- MMBTA42
- MMBTA28
- MMBTA20
- MMBTA14
- MMBTA13
- MMBTA12
- MMBTA11
- MMBTA10
- MMBTA05
- MMBT945
- MMBT930
- MMBT918
- MMBT8599
- MMBT8598
- MMBT720
- MMBT6543
- MMBT6520
- MMBT6517
- MMBT6429
- MMBT6428
- MMBT6427
- MMBT6426
- MMBT619
- MMBT593
- MMBT591
- MMBT589
- MMBT56
- MMBT5551
- MMBT5550
- MMBT5401
- MMBT5089
- MMBT5088
- MMBT493
- MMBT491
- MMBT4403
- MMBT4401
- MMBT42
- MMBT4126
- MMBT28S
- MMBT200
- MMBT100
- MMBR951
- MMBR941
- MMBR931
- MMBR930
- MMBR920
MMBTA06数据表相关新闻
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管，采用 SOT-23 封装，符合 AEC-Q101 要求，适用于汽车、工业等领域。
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管，采用 SOT-23 封装，符合 AEC-Q101 要求，适用于汽车、工业等领域。
2025-7-22MMBTA56LT1G
进口代理
2024-1-30MMBT9013G-SOT23.3R-H-TG_UTC代理商
MMBT9013G-SOT23.3R-H-TG_UTC代理商
2023-2-15MMBT6520LT1G
原装代理
2022-6-18MMBTA64-7-F 达林顿晶体管
MMBTA64-7-F 达林顿晶体管
2021-1-12MMBTA28-7-F，美台原装正品，SOT-23
MMBTA28-7-F，美台原装正品，SOT-23
2019-5-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
