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MMBTA05晶体管资料
MMBTA05别名：MMBTA05三极管、MMBTA05晶体管、MMBTA05晶体三极管
MMBTA05生产厂家：美国摩托罗拉半导体公司
MMBTA05制作材料：
MMBTA05性质：低频或音频放大 （LF）_通用 （G）
MMBTA05封装形式：
MMBTA05极限工作电压：60V
MMBTA05最大电流允许值：0.5A
MMBTA05最大工作频率：<1MHZ或未知
MMBTA05引脚数：
MMBTA05最大耗散功率：0.3W
MMBTA05放大倍数：
MMBTA05图片代号：NO
MMBTA05vtest：60
MMBTA05htest：999900
- MMBTA05atest：0.5
MMBTA05wtest：0.3
MMBTA05代换 MMBTA05用什么型号代替：3DK30C,
MMBTA05价格
参考价格：￥0.2528
型号：MMBTA05 品牌：FAIRCHILD 备注：这里有MMBTA05多少钱，2025年最近7天走势，今日出价，今日竞价，MMBTA05批发/采购报价，MMBTA05行情走势销售排行榜，MMBTA05报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA05 | NPN General Purpose Amplifier NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. | Fairchild 仙童半导体 |   | |
MMBTA05 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBTA55 / MMBTA56) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability | DIODES 美台半导体 | | |
MMBTA05 | EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES • Complementary to MMBTA55. • Driver Stage Application of 20 to 25 Watts Amplifiers. | KEC KEC(Korea Electronics) | | |
MMBTA05 | Driver NPN Transistors Driver NPN TRANSISTOR P/b Lead(Pb)-Free | WEITRON | | |
MMBTA05 | NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching | BILIN 银河微电 | | |
MMBTA05 | Surface mount general purpose Si-epitaxial planar transistors NPN Surface mount general purpose Si-epitaxial planar transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | | |
MMBTA05 | Driver Transistors Features ● Driver transistors. ● NPN silicon. | KEXIN 科信电子 | | |
MMBTA05 | NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | |
MMBTA05 | NPN Small Signal General Purpose Amplifier Transistors Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA55/MMBTA56) • Ideal for Medium Power Amplification and Switching. • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability ra | MCC | | |
MMBTA05 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FEATURES Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA55 / MMBTA56) Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics | | |
MMBTA05 | TRANSISTOR(NPN) FEATURES Driver transistor | HTSEMI 金誉半导体 | | |
MMBTA05 | Epitaxial Transistor DESCRIPTION The MMBTA05 is Amplifier Transistor FEATURES Driver Transistor | SECOS 喜可士 | | |
MMBTA05 | SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance | TAITRON | | |
MMBTA05 | NPN MMBTA05 FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | |
MMBTA05 | NPN General Purpose Transistor FEATURES ● High breakdown voltage. ● Complementary PNP type available (MMBTA55/MMBTA56). ● Low collector-emitter saturation voltage. APPLICATIONS ● Ideal for medium power amplification and switching. | LUGUANG 鲁光电子 | | |
MMBTA05 | SOT-23 Plastic-Encapsulate Transistors FEATURES Driver transistor | DGNJDZ 南晶电子 | | |
MMBTA05 | SOT-23 Plastic-Encapsulate Transistors FEATURES Driver transistor | UMW 友台半导体 | | |
MMBTA05 | Silicon Epitaxial Transistor DESCRIPTION The MMBTA05 is Amplifier Transistor FEATURES Driver Transistor | GWSEMI 唯圣电子 | | |
MMBTA05 | Low-power pyroelectric infrared sensor signal processing chip Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power | HMSEMI 华之美半导体 | | |
MMBTA05 | NPN Transistor Surface device type mounting Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Driver Transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code Mechanical Data ◇ Case:SOT-23 small ou | TSC 台湾半导体 | | |
MMBTA05 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Driver transistor | JIANGSU 长电科技 | | |
MMBTA05 | Plastic-Encapsulate Transistors FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Types Available (MMBTA55 / MMBTA56) ● Ideal for Medium Power Amplification and Switching | HOTTECH 合科泰 | | |
MMBTA05 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR ( NPN ) Features ● Driver transistor | HDSEMI 海德半导体 | | |
MMBTA05 | DriverTransistors FEATURES • We declare that the material of product compliance with RoHS requirements. | FS | | |
MMBTA05 | NPN Small Signal General Purpose Amplifier Transistors 文件：799.69 Kbytes Page：6 Pages | MCC | | |
MMBTA05 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MMBTA05 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 60V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
MMBTA05 | NPN, 60V, 0.5A, SOT23 | DIODES 美台半导体 | | |
MMBTA05 | 300mW, NPN Small Signal Transistor 文件：749.92 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MMBTA05 | Silicon NPN transistor in a SOT-23 Plastic Package 文件：1.02081 Mbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
MMBTA05 | NPN Plastic-Encapsulate Transistors 文件：1.46902 Mbytes Page：5 Pages | JINGHENG 晶恒 | | |
MMBTA05 | NPN General Purpose Transistor 文件：222.85 Kbytes Page：5 Pages | BILIN 银河微电 | | |
MMBTA05 | Driver NPN Transistors 文件：249.33 Kbytes Page：4 Pages | WEITRON | | |
MMBTA05 | EPITAXIAL PLANAR NPN TRANSISTOR 文件：41.15 Kbytes Page：2 Pages | KEC KEC(Korea Electronics) | | |
MMBTA05 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：106.99 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
MMBTA05 | NPN (DRIVER TRANSISTOR) 文件：26.35 Kbytes Page：1 Pages | Samsung 三星 | | |
MMBTA05 | NPN Small Signal General Purpose Amplifier Transistors 文件：670.52 Kbytes Page：4 Pages | MCC | | |
MMBTA05 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：112.14 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
NPN General Purpose Transistor Description The MMBTA05-A06 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which has been designed to achieve very low on-state resistance providing | BWTECH | | ||
NPN AND PNP HIGH VOLTAGE TRANSISTOR NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current IC= 500mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/95/EC directives. | PANJIT 強茂 | | ||
NPN MMBTA05 FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | ||
Driver Transistors Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
GENERAL PURPOSE TRANSISTORS DRIVER TRANSISTORS DESCRIPTION The MBTA0 5 L MBTA06L are available in SOT 23p ackage. FEATURES Available in SOT 23 p ackage | AITSEMI 创瑞科技 | | ||
NPN MMBTA05 FEATURES * Collector-Emitter Voltage: VCEO=60V | UTC 友顺 | | ||
Driver Transistors Driver Transistors NPN Silicon | Motorola 摩托罗拉 | | ||
Driver Transistors(NPN Silicon) Driver Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
Driver Transistors(NPN Silicon) Driver Transistors NPN Silicon | LRC 乐山无线电 | | ||
Driver Transistors NPN Silicon Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25 | WINNERJOIN 永而佳 | | ||
Driver Transistors NPN Silicon Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
Driver Transistors Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
NPN Small Signal General Purpose Amplifier Transistors Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA55/MMBTA56) • Ideal for Medium Power Amplification and Switching. • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability ra | MCC | | ||
EPITAXIAL PLANAR NPN TRANSISTOR 文件：41.15 Kbytes Page：2 Pages | KEC KEC(Korea Electronics) | | ||
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：106.99 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：112.14 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
Driver NPN Transistors 文件：249.33 Kbytes Page：4 Pages | WEITRON | | ||
NPN Small Signal General Purpose Amplifier Transistors 文件：670.52 Kbytes Page：4 Pages | MCC | |
MMBTA05产品属性
- 类型
描述
- 型号
MMBTA05
- 功能描述
两极晶体管 - BJT NPN Transistor General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
KEC |
2016+ |
SOT23 |
6532 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
25+ |
SOT-23 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
DIODES/美台 |
25+ |
SOT-23 |
38364 |
DIODES/美台全新特价MMBTA05-7-F即刻询购立享优惠#长期有货 |
|||
ONSEMI/安森美 |
2450+ |
SOT23 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
24+/25+ |
19583 |
原装正品现货库存价优 |
||||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ON |
21+ |
TO-23 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
CJ/长电 |
24+ |
SOT-23 |
50000 |
全新原装,一手货源,全场热卖! |
MMBTA05规格书下载地址
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MMBTA05数据表相关新闻
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管，采用 SOT-23 封装，符合 AEC-Q101 要求，适用于汽车、工业等领域。
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管，采用 SOT-23 封装，符合 AEC-Q101 要求，适用于汽车、工业等领域。
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