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MMBT3906晶体管资料
MMBT3906别名:MMBT3906三极管、MMBT3906晶体管、MMBT3906晶体三极管
MMBT3906生产厂家:美国摩托罗拉半导体公司
MMBT3906制作材料:
MMBT3906性质:低频或音频放大 (LF)_通用 (G)
MMBT3906封装形式:
MMBT3906极限工作电压:
MMBT3906最大电流允许值:0.2A
MMBT3906最大工作频率:<1MHZ或未知
MMBT3906引脚数:
MMBT3906最大耗散功率:
MMBT3906放大倍数:
MMBT3906图片代号:NO
MMBT3906vtest:0
MMBT3906htest:999900
- MMBT3906atest:0.2
MMBT3906wtest:0
MMBT3906代换 MMBT3906用什么型号代替:BCW70,3DG120C,
MMBT3906价格
参考价格:¥0.0995
型号:MMBT3906 品牌:Fairchild 备注:这里有MMBT3906多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT3906批发/采购报价,MMBT3906行情走势销售排行榜,MMBT3906报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT3906 | TXRX_982_R1 Evaluation Board SY88973/SY88982/MIC3001-Based SFP Module General Description This evaluation board is an implementation of the SFP module in a different form factor with on board faults indicators (LEDs) and a DB-25 connector for serial communication. The design uses Micrels MIC3001 controller, SY88982 (pin com | Micrel 麦瑞半导体 | ||
MMBT3906 | PNP General Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT3906 | PNP General Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT3906 | PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. | ONSEMI 安森美半导体 | ||
MMBT3906 | PNP switching transistor DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Telephony and professional communication equipment. | Philips 飞利浦 | ||
MMBT3906 | PNP Silicon Switching Transistor PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMB | Infineon 英飞凌 | ||
MMBT3906 | GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904 | UTC 友顺 | ||
MMBT3906 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | ||
MMBT3906 | 40V PNP SMALL SIGNAL TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type: MMBT3904 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | ||
MMBT3906 | Surface Mount Si-Epi-Planar Switching Transistors Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reel | Diotec 德欧泰克 | ||
MMBT3906 | 200mW PNP Bipolar Transistors Feature * Power Dissipation Pcm= 200 mW (Ta=25C) * Collector Current Icm=0.2A * Collector-base Voltage Vbr (cbo)= 40V * Operating and Storage Junction Temperature Range Tj. Tstg: -55C ~ +150C * Marking 2A | FCI 富加宜 | ||
MMBT3906 | PNP General Purpose Amplifier Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 300mWatts of Power Dissipation • Marking:2A | MCC | ||
MMBT3906 | 30.3 Watts PNP Plastic-Encapsulate Transistors FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free) | TSC 台湾半导体 | ||
MMBT3906 | General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon | WEITRON | ||
MMBT3906 | PNP GENERAL PURPOSE AMPLIFIER
| SUNMATE 森美特 | ||
MMBT3906 | PNP switching transistor | ETC 知名厂家 | ETC | |
MMBT3906 | PNP General Purpose Transistor FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT3904). ● Collector Current Capability ICM =-200mA. ● Low Voltage(Max:-40V). APPLICATIONS ● Ideal for medium power amplification and switching. | BILIN 银河微电 | ||
MMBT3906 | General Purpose Transistor (PNP) PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching | COMCHIP 典琦 | ||
MMBT3906 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● As complementary type, the NPN transistor MMBT3904 is Recommended ● Epitaxial planar die construction | DAYA 大亚电器 | ||
MMBT3906 | PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage - -40 Volts Power Dissipation - 300 mWatt FEATURES ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT3904) ● Ideal for Medium Power Amplification and Switching | DIOTECH | ||
MMBT3906 | SMALL SIGNAL TRANSISTORS (PNP) FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor MMBT3904 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation 2N3906. | GE | ||
MMBT3906 | PNP Switching Transistor ■ FEATURES PNP Switching Transistor | GSME 桂微 | ||
MMBT3906 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● As complementary type, the NPN transistor MMBT3904 is Recommended ● Epitaxial planar die construction | JIANGSU 长电科技 | ||
MMBT3906 | PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above | PANJIT 強茂 | ||
MMBT3906 | -200 mA, -40 V PNP Plastic Encapsulated Transistor FEATURES ♦ Collector current capability IC=-200mA ♦ Collector-emitter voltage VCEO=-40V. APPLICATION ♦ General switching and amplification. | SECOS 喜可士 | ||
MMBT3906 | PNP Silicon General Purpose Transistor PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is recommended. | SEMTECH_ELEC 先之科半导体 | ||
MMBT3906 | TRANSISTOR (PNP) FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction | SY 顺烨电子 | ||
MMBT3906 | SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance | TAITRON | ||
MMBT3906 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics | ||
MMBT3906 | GENERAL PURPOSE TRANSISTOR NPN SILICON General Purpose Transistor PNP Silicon Lead free product | ZOWIE 智威 | ||
MMBT3906 | SMALL SIGNAL PNP TRANSISTOR SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS MMBT3904 APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH | STMICROELECTRONICS 意法半导体 | ||
MMBT3906 | PNP Silicon General Purpose Transistor PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is recommended. | DGNJDZ 南晶电子 | ||
MMBT3906 | For switching and amplifier applications For switching and amplifier applications As complementary types the NPN transistors MMBT3904 is recommended. | KINGTRONICS 京创国际 | ||
MMBT3906 | As complementary type the PNP transistor MMBT3904 is recommended FEATURES As complementary type the PNP transistor MMBT3904 is recommended Epitaxial planar die construction | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
MMBT3906 | Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High DC Current Gain, Low Collector to Emitter Saturation Voltage. Applications General purpose amplifier and switching. | FOSHAN 蓝箭电子 | ||
MMBT3906 | NPN Silicon ● Features: For switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is recommended. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
MMBT3906 | PNP switching transistor FEATURES •Collector current capability IC = −200 mA •Collector-emitter voltage VCEO = −40 V. APPLICATIONS •General switching and amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
MMBT3906 | Plastic-Encapsulate Transistors FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction | GWSEMI 唯圣电子 | ||
MMBT3906 | PNP Transistors Features ● Complementary to MMBT3904 ● Marking: 2A | YFWDIODE 佑风微 | ||
MMBT3906 | Plastic-Encapsulate Transistors FEATURES As complementary type the PNP transistor MMBT3904 is recommended Epitaxial planar die construction | HOTTECH 合科泰 | ||
MMBT3906 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) Features ● As complementary type, the NPN transistor MMBT3904 is Recommended ● Epitaxial planar die construction | HDSEMI 海德半导体 | ||
MMBT3906 | PNP General Purpose Amplifier Features • Collector current capability IC = -200 mA • Collector-emitter voltage VCEO = -40 V • RoHS compliant package Application • General switching and amplification | BWTECH | ||
MMBT3906 | PNP General Purpose Amplifier Features ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:2A | SAMYANG 三阳电子 | ||
MMBT3906 | MMBT3906: PNP General Purpose Amplifier | ONSEMI 安森美半导体 | ||
MMBT3906 | TRANSISTOR (PNP) 文件:756.31 Kbytes Page:4 Pages | BYTESONIC 松浩电子 | ||
MMBT3906 | 40V Matched Pair PNP Small Signal Transistors 文件:1.95167 Mbytes Page:14 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | ||
MMBT3906 | Plastic-Encapsulate Transistors 文件:387.29 Kbytes Page:2 Pages | SHENZHENSLS 三联盛 | ||
MMBT3906 | PNP Transistor 文件:1.22983 Mbytes Page:4 Pages | PJSEMI 平晶半导体 | ||
MMBT3906 | PNP Plastic-Encapsulate Transistors 文件:579.4 Kbytes Page:5 Pages | JINGHENG 晶恒 | ||
MMBT3906 | TRANSISTOR (PNP) 文件:316.25 Kbytes Page:3 Pages | KOOCHIN 灏展电子 | ||
MMBT3906 | GENERAL PURPOSE APPLICATION 文件:1.76226 Mbytes Page:4 Pages | ARTSCHIP | ||
MMBT3906 | PNP General Purpose Transistor 文件:1.48965 Mbytes Page:3 Pages | LUGUANG 鲁光电子 | ||
MMBT3906 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
MMBT3906 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 40V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | |
MMBT3906 | PNP switching transistor | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
MMBT3906 | PNP Silicon Switching Transistor | Infineon 英飞凌 | ||
MMBT3906 | We declare that the material of product compliant with RoHS requirements and Halogen Free 文件:957.56 Kbytes Page:5 Pages | LEIDITECH 雷卯电子 | ||
MMBT3906 | PNP Transistors 文件:1.2733 Mbytes Page:2 Pages | KEXIN 科信电子 | ||
MMBT3906 | isc Silicon PNP Power Transistors 文件:305.94 Kbytes Page:3 Pages | ISC 无锡固电 | ||
MMBT3906 | PNP General Purpose Transistor 文件:129.669 Kbytes Page:4 Pages | BILIN 银河微电 |
MMBT3906产品属性
- 类型
描述
- 型号
MMBT3906
- 功能描述
两极晶体管 - BJT PNP General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-523(SC-75) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FSC |
2016+ |
SOT23 |
252000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
23+ |
SOT23 |
6500 |
全新原装假一赔十 |
|||
MOTOROLA/摩托罗拉 |
25+ |
原装 |
32000 |
MOTOROLA/摩托罗拉全新特价MMBT3906LT1即刻询购立享优惠#长期有货 |
|||
FAI |
1320 |
SOT23 |
3000 |
原装现货价格有优势量大可以发货 |
|||
STARSEA/CJ |
2450+ |
SOD/SMA/SOT |
9950 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON-SEMI |
22+ |
N/A |
30000 |
原装正品 香港现货 |
|||
FAIRCHILD/仙童 |
18+ |
SOT23-3 |
32601 |
全新原装现货,可出样品,可开增值税发票 |
|||
ON/安森美 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
ON |
12+ |
SOT-23 |
2500 |
原装现货/特价 |
MMBT3906芯片相关品牌
MMBT3906规格书下载地址
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MMBT3906数据表相关新闻
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晶体管类型:PNP 电流 - 集电极(Ic)(最大值):200mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):400mV @ 5mA,50mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 10mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59
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2019-3-5
DdatasheetPDF页码索引
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