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MMBT3906晶体管资料
MMBT3906别名：MMBT3906三极管、MMBT3906晶体管、MMBT3906晶体三极管
MMBT3906生产厂家：美国摩托罗拉半导体公司
MMBT3906制作材料：
MMBT3906性质：低频或音频放大 （LF）_通用 （G）
MMBT3906封装形式：
MMBT3906极限工作电压：
MMBT3906最大电流允许值：0.2A
MMBT3906最大工作频率：<1MHZ或未知
MMBT3906引脚数：
MMBT3906最大耗散功率：
MMBT3906放大倍数：
MMBT3906图片代号：NO
MMBT3906vtest：0
MMBT3906htest：999900
- MMBT3906atest：0.2
MMBT3906wtest：0
MMBT3906代换 MMBT3906用什么型号代替：BCW70,3DG120C,
MMBT3906价格
参考价格：￥0.0995
型号：MMBT3906 品牌：Fairchild 备注：这里有MMBT3906多少钱，2025年最近7天走势，今日出价，今日竞价，MMBT3906批发/采购报价，MMBT3906行情走势销售排行榜，MMBT3906报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT3906 | PNPswitchingtransistor DESCRIPTION PNPswitchingtransistorinaSOT23plasticpackage. NPNcomplement:MMBT3904. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   |
MMBT3906 | SMALLSIGNALPNPTRANSISTOR SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPEISMMBT3904 APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITH | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
MMBT3906 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904) IdealforMediumPowerAmplificationandSwitching | TRSYS Transys Electronics |  | |
MMBT3906 | GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor PNPSilicon Leadfreeproduct | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 |  | |
MMBT3906 | PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MMBT3906 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •ComplementaryNPNType:MMBT3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 美台半导体 |  | |
MMBT3906 | PNPSiliconSwitchingTransistor PNPSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3906SandSMBT3906U: Two(galvanic)internalisolatedtransistor withgoodmatchinginonepackage •Complementarytypes: SMBT3904...MMBT3904(NPN) •SMB | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
MMBT3906 | GeneralPurposeTransistor(PNP) PNPSiliconType Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904) IdealforMediumPowerAmplificationandSwitching | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | |
MMBT3906 | SMALLSIGNALTRANSISTORS(PNP) FEATURES ♦PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ♦Ascomplementarytype,theNPN transistorMMBT3904isrecommended. ♦ThistransistorisalsoavailableintheTO-92casewith thetypedesignation2N3906. | GE GE Industrial Company |  | |
MMBT3906 | PNPGeneralPurposeAmplifier Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof300mWattsofPowerDissipation •Marking:2A | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
MMBT3906 | GENERALPURPOSEAPPLIATION FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3904 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
MMBT3906 | GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistor PNPSilicon | WEITRON Weitron Technology |  | |
MMBT3906 | PNPGENERALPURPOSESWITCHINGTRANSISTOR VOLTAGE40VoltsPOWER225mWatts FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-200mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | |
MMBT3906 | 30.3WattsPNPPlastic-EncapsulateTransistors FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeans greencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | |
MMBT3906 | SurfaceMountSi-Epi-PlanarSwitchingTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreel | DiotecDiotec Semiconductor 德欧泰克 |  | |
MMBT3906 | SMDGeneralPurposeTransistor(PNP) Features •PNPSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance | TAITRON TAITRON Components Incorporated |  | |
MMBT3906 | PNPGeneralPurposeTransistor FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMBT3904). ●CollectorCurrentCapabilityICM=-200mA. ●LowVoltage(Max:-40V). APPLICATIONS ●Idealformediumpoweramplificationandswitching. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
MMBT3906 | PNPswitchingtransistor | ETC 知名厂家 | ETC | |
MMBT3906 | PNPSiliconGeneralPurposeTransistor PNPSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypestheNPNtransistors MMBT3904isrecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | |
MMBT3906 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Ascomplementarytype,theNPNtransistor MMBT3904isRecommended ●Epitaxialplanardieconstruction | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 |  | |
MMBT3906 | -200mA,-40VPNPPlasticEncapsulatedTransistor FEATURES ♦CollectorcurrentcapabilityIC=-200mA ♦Collector-emittervoltageVCEO=-40V. APPLICATION ♦Generalswitchingandamplification. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | |
MMBT3906 | PNPGENERALPURPOSESWITCHINGTRANSISTOR Voltage--40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypeAvailable(MMBT3904) ●IdealforMediumPowerAmplificationandSwitching | DIOTECH Diotech Company. |  | |
MMBT3906 | 40VPNPSMALLSIGNALTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryNPNType:MMBT3904 ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 美台半导体 | | |
MMBT3906 | PNPSwitchingTransistor ■FEATURES PNPSwitchingTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 |  | |
MMBT3906 | PNPGeneralPurposeAmplifier Features •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •RoHScompliantpackage Application •Generalswitchingandamplification | BWTECH Bruckewell Technology LTD |  | |
MMBT3906 | AscomplementarytypethePNPtransistorMMBT3904isrecommended FEATURES AscomplementarytypethePNPtransistorMMBT3904isrecommended Epitaxialplanardieconstruction | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 |  | |
MMBT3906 | PNPTransistors Features ●ComplementarytoMMBT3904 ●Marking:2A | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
MMBT3906 | Plastic-EncapsulateTransistors FEATURES AscomplementarytypethePNPtransistorMMBT3904isrecommended Epitaxialplanardieconstruction | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 |  | |
MMBT3906 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Ascomplementarytype,theNPNtransistor MMBT3904isRecommended ●Epitaxialplanardieconstruction | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | |
MMBT3906 | SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features HighDCCurrentGain,LowCollectortoEmitterSaturationVoltage. Applications Generalpurposeamplifierandswitching. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
MMBT3906 | Forswitchingandamplifierapplications Forswitchingandamplifierapplications AscomplementarytypestheNPNtransistors MMBT3904isrecommended. | KINGTRONICSKingtronics International Company 金力金力国际公司 |  | |
MMBT3906 | PNPGENERALPURPOSEAMPLIFIER
| SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | |
MMBT3906 | PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MMBT3906 | 200mWPNPBipolarTransistors Feature *PowerDissipationPcm=200mW(Ta=25C) *CollectorCurrentIcm=0.2A *Collector-baseVoltageVbr(cbo)=40V *OperatingandStorageJunctionTemperatureRangeTj.Tstg:-55C~+150C *Marking2A | FCIFirst Components International 戈采戈采企业股份有限公司 |  | |
MMBT3906 | PNPSiliconGeneralPurposeTransistor PNPSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypestheNPNtransistors MMBT3904isrecommended. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
MMBT3906 | TXRX_982_R1EvaluationBoard SY88973/SY88982/MIC3001-BasedSFPModule GeneralDescription ThisevaluationboardisanimplementationoftheSFPmoduleinadifferentformfactorwithonboardfaultsindicators(LEDs)andaDB-25connectorforserialcommunication.ThedesignusesMicrelsMIC3001controller,SY88982(pincom | MicrelMicrel Semiconductor 麦瑞半导体 |  | |
MMBT3906 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) Features ●Ascomplementarytype,theNPNtransistor MMBT3904isRecommended ●Epitaxialplanardieconstruction | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | |
MMBT3906 | NPNSilicon ●Features:Forswitchingandamplifierapplications.Ascomplementary typestheNPNtransistorsMMBT3904isrecommended. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 |  | |
MMBT3906 | PNPswitchingtransistor FEATURES •CollectorcurrentcapabilityIC=−200mA •Collector-emittervoltageVCEO=−40V. APPLICATIONS •Generalswitchingandamplification. DESCRIPTION PNPswitchingtransistorinaSOT23plasticpackage.NPNcomplement:MMBT3904. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
MMBT3906 | TRANSISTOR(PNP) FEATURES Ascomplementarytype,theNPNtransistor MMBT3904isRecommended Epitaxialplanardieconstruction | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 |  | |
MMBT3906 | Plastic-EncapsulateTransistors FEATURES Ascomplementarytype,theNPNtransistor MMBT3904isRecommended Epitaxialplanardieconstruction | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | |
MMBT3906 | PNPGeneralPurposeAmplifier Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●Marking:2A | SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司 |  | |
MMBT3906 | TRANSISTOR(PNP) 文件：316.25 Kbytes Page：3 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
MMBT3906 | 40VMatchedPairPNPSmallSignalTransistors 文件：1.95167 Mbytes Page：14 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |  | |
MMBT3906 | iscSiliconPNPPowerTransistors 文件：305.94 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MMBT3906 | Plastic-EncapsulateTransistors 文件：387.29 Kbytes Page：2 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 |  | |
MMBT3906 | GENERALPURPOSEAPPLICATION 文件：1.76226 Mbytes Page：4 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
MMBT3906 | TRANSISTOR(PNP) 文件：756.31 Kbytes Page：4 Pages | BYTESONICBytesonic Electronics Co., Ltd. 松浩电子松浩电子股份有限公司 |  | |
MMBT3906 | PNPTransistor 文件：1.22983 Mbytes Page：4 Pages | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 |  | |
MMBT3906 | PNPGeneralPurposeTransistor 文件：1.48965 Mbytes Page：3 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
MMBT3906 | WedeclarethatthematerialofproductcompliantwithRoHSrequirementsandHalogenFree 文件：957.56 Kbytes Page：5 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
MMBT3906 | PNPPlastic-EncapsulateTransistors 文件：579.4 Kbytes Page：5 Pages | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 |  | |
MMBT3906 | PNPTransistors 文件：1.2733 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
MMBT3906 | GENERALPURPOSEAPPLIATION 文件：140.12 Kbytes Page：3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
MMBT3906 | 350mW,PNPSmallSignalTransistor 文件：229.24 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
MMBT3906 | PNPGeneralPurposeTransistor 文件：129.669 Kbytes Page：4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | | |
MMBT3906 | SMDGeneralPurposePNPTransistors 文件：144.76 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | |
MMBT3906 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 40V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
MMBT3906 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MMBT3906 | PNPGeneralPurposeAmplifier 文件：502.76 Kbytes Page：6 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
MMBT3906产品属性
- 类型
描述
- 型号
MMBT3906
- 功能描述
两极晶体管 - BJT PNP General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
SOT23 |
252000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
恩XP |
23+ |
SOT23 |
12328 |
原装正品价格优惠,长期优势供应 |
|||
23+ |
SMD |
618000 |
明嘉莱只做原装正品现货 |
||||
ON/安森美 |
24+ |
SOT-23 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
FAIRCHILD/仙童 |
2404+ |
SOT-23 |
3300 |
现货正品原装,假一赔十 |
|||
ON |
22+ |
SOT23 |
680000 |
||||
CJ |
19+ |
SOT23 |
11000 |
||||
FAIRCHILD |
24+ |
TO-23 |
5000 |
公司存货 |
|||
CJ |
23+ |
SOT-23 |
60000 |
原装正品,假一罚十 |
|||
国产长电 |
18+ |
SOT-23 |
9800 |
代理进口原装/实单价格可谈 |
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MMBT3906规格书下载地址
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晶体管类型：PNP 电流-集电极（Ic）（最大值）：200mA 电压-集射极击穿（最大值）：40V 不同?Ib，Ic时的?Vce饱和值（最大值）：400mV@5mA，50mA 不同?Ic，Vce?时的DC电流增益（hFE）（最小值）：100@10mA，1V 功率-最大值：300mW 频率-跃迁：250MHz 安装类型：表面贴装 封装/外壳：TO-236-3，SC-59
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