SMALL SIGNAL PNP TRANSISTOR

SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE & REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS MMBT2222A APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT2222A) Ideal for Medium Power Amplification and Switching.

PNP General Purpose Amplifier

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

Small Signal Transistor (PNP)

Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A.

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Complementary NPN Type: MMBT2222A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High

PNP General Purpose Amplifier

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 350mW of Pd, 600mA continuous collector current • Operating and Storage Junction Temperatures:-55°C to 150°C • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensit

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

General Purpose Transistor (PNP)

Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching

PNP General Purpose Transistors

PNP General Purpose Transistors

Small Signal Transistor (PNP)

Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2F Packaging

PNP GENERAL PURPOSE AMPLIFIER

■ FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

SMD General Purpose Transistor (PNP)

Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance

PNP General Purpose Amplifier

FEATURES ● Epitaxial planar die construction. Pb Lead-free ● Complementary NPN type available MMBT2222A. ● Ideal for medium power amplification and switching. APPLICATIONS ● This device is designed as a general purpose amplifier and switching. ● The useful dynamic range extends

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 60 Volts POWER 225 mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.

350mW, PNP Small Signal Transistor

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on dat

General Purpose Transistor

FEATURES • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT2222A) • Ideal for Medium Power Amplification and Switching

PNP Silicon Transistor

Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT2222A

TRANSISTPR(PNP)

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

PNP Silicon Switching Transistor

PNP Silicon Switching Transistor ● High DC current gain: 0.1mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT2222A/ MMBT2222A (NPN)

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) Features ● Epitaxial planar die construction ● Complementary NPN Type available(MMBT2222A)

PNP Transistors

Features ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT2222A)

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Epitaxial planar die construction ● Complementary NPN Type available(MMBT2222A)

General Purpose PNP Epitaxial Planar Transistor

Description • The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC(Max)= -0.6A • Low VCE(sat), ideal for low-voltage operation. • Complementary to MMBT2222A. • Pb-free package

Plastic-Encapsulate Transistors

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

PNP GENERAL PURPOSE AMPLIFIER

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 350mWatts of Pd, 600mA continuous collector current. • Operating and Storage Junction Temperatures: -55°C to 150°C • Epoxy meets UL 94 V-0 flammability rating • Moi

TRANSISTOR (PNP)

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Collector currents to 600mA. Applications General purpose amplifier.

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT2222A) ● Ideal for Medium Power Amplification and Switching Mechanical Data ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammability Rating Classification 94V-0 ● Moisture sensitivity: Level 1 per J

isc Silicon PNP Transistor

DESCRIPTION • Low Voltage Use • Ultra Super Mini Mold Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise and small signal amplifiers from VHF band to UHF band

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requiremen

Epitaxial planar die construction

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMBT2222A. ● Ideal for medium power amplification and switching. APPLICATIONS ● This device is designed as a general purpose amplifier and switching. ● The useful dynamic range extends to 600mA as a switch and

NPN Silicon

PNP Silicon

Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A)

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

Plastic-Encapsulate Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.8A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP General Purpose Amplifier

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PNP Silicon Epitaxial Planar Transistor

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PNP Silicon Switching Transistor

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PNP GENERAL PURPOSE AMPLIFIER

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PNP General Purpose Amplifier

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PNP Plastic-Encapsulate Transistors

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General purpose application

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Surface Mount Si-Epi-Planar Switching Transistors

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60V PNP SMALL SIGNAL TRANSISTOR

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SMD General Purpose PNP Transistors

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PNP General Purpose Amplifier

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350mW, PNP Small Signal Transistor

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PNP General Purpose Amplifier

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GENERAL PURPOSE TRANSISTOR PNP SILICON

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PNP Silicon Switching Transistor Low collector-emitter saturation voltage

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