PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.

PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

PNP (GENERAL PURPOSE TRANSISTOR)

PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP General Purpose Transistors

PNP General Purpose Transistors

丝印代码：M2B；PNP General Purpose Amplifier

FEATURES ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. APPLICATIONS ● This device is designed as a general purpose amplifier and switching.

General Purpose Transistor (PNP)

Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.

丝印代码：M2B；TRANSISTOR (PNP)

FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222)

丝印代码：M2B；SOT-23 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222)

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain.

丝印代码：M2B；T RANSISTOR (PNP)

FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222)

Epitaxial planar die construction.

FEATURES Epitaxial planar die construction. Ideal for medium power amplification and switching.

丝印代码：M2B；NPN Silicon

PNP Silicon

Silicon PNP transistor in a SOT-23 Plastic Package

文件：1.54315 Mbytes Page：6 Pages

PNP Silicon Epitaxial Planar Transistor

文件：426.51 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：TRANS PNP 40V 0.8A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：2F；TRANSISTOR(PNP)

文件：438.54 Kbytes Page：4 Pages

丝印代码：M2B；PNP General Purpose Amplifier

文件：1.55476 Mbytes Page：3 Pages

SOT-23 Plastic-Encapsulate Transistors

文件：780.68 Kbytes Page：4 Pages

丝印代码：M2B；PNP General Purpose Amplifier

文件：77.27 Kbytes Page：2 Pages

Plastic-Encapsulate Transistors

文件：197.94 Kbytes Page：2 Pages

SOT-23 Plastic-Encapsulate Transistors

文件：2.58576 Mbytes Page：4 Pages

小信号晶体管

PNP小信号三极管

晶体管

丝印代码：M2B；PNP General Purpose Amplifier

文件：196.68 Kbytes Page：4 Pages

Surface Mount Si-Epi-Planar Switching Transistors

文件：99.33 Kbytes Page：2 Pages

Surface Mount Si-Epi-Planar Switching Transistors

文件：100.95 Kbytes Page：2 Pages

PNP General Purpose Amplifier

文件：55.78 Kbytes Page：3 Pages

PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

SOT-23 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222)

SMALL SIGNAL PNP TRANSISTOR

SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE & REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS MMBT2222A APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain.

丝印代码：2F；NPN Silicon

PNP Silicon

TRANSISTOR (PNP)

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Collector currents to 600mA. Applications General purpose amplifier.

丝印代码：2F；Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A)

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT2222A) ● Ideal for Medium Power Amplification and Switching Mechanical Data ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammability Rating Classification 94V-0 ● Moisture sensitivity: Level 1 per J

丝印代码：2F；PNP Transistors

Features ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT2222A)

Plastic-Encapsulate Transistors

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Epitaxial planar die construction ● Complementary NPN Type available(MMBT2222A)

丝印代码：2F；Epitaxial planar die construction

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMBT2222A. ● Ideal for medium power amplification and switching. APPLICATIONS ● This device is designed as a general purpose amplifier and switching. ● The useful dynamic range extends to 600mA as a switch and

丝印代码：M7A；PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 60 Volts POWER 225 mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

PNP Silicon Transistor

Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT2222A

General Purpose Transistor

FEATURES • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT2222A) • Ideal for Medium Power Amplification and Switching

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT2222A) Ideal for Medium Power Amplification and Switching.

Small Signal Transistor (PNP)

Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2F Packaging

SMD General Purpose Transistor (PNP)

Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.

丝印代码：2F；General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requiremen

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) Features ● Epitaxial planar die construction ● Complementary NPN Type available(MMBT2222A)

PNP Silicon Switching Transistor

PNP Silicon Switching Transistor ● High DC current gain: 0.1mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT2222A/ MMBT2222A (NPN)

PNP GENERAL PURPOSE AMPLIFIER

■ FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

丝印代码：K2F；PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Complementary NPN Type: MMBT2222A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General Purpose Amplifier

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled