PNP Silicon High-Frequency Transistor

The RF Line PNP Silicon High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 3.0 dB Ty

PNP Silicon High-Frequency Transistor

The RF Line PNP Silicon High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 3.0 dB Ty

PNP Silicon High-Frequency Transistor

UP TO 4A ULDO LINEAR REGULATOR

DESCRIPTION The L4957 devices are Ultra Low Drop Output lin ear regulators with an internal N-channel MOS of 200mΩ particulary suitable for low voltage/low dropout applications. Operating with a input voltage from 3V to 6.5V they are capable to deliver up to 4A at 1.5V or 2.5V fixed output volt

UP TO 5A ULDO LINEAR REGULATOR

DESCRIPTION The L4957A devices are Ultra Low Drop Output linear regulators with an internal N-channel MOS of 200mΩ particulary suitable for low voltage/low dropout applications. Operating with a input voltage from 3V to 14V they are capable to deliver up to 5A. 1.5V, 1.8V, 2.5V AND 3.3V FI

丝印代码：GT；Voltage Detector IC

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Chip Type 2C4957 Geometry 0006 Polarity PNP

文件：29.82 Kbytes Page：1 Pages

Chip Type 2C4957 Geometry 0006 Polarity PNP

文件：29.82 Kbytes Page：1 Pages