丝印代码：6S；N-Channel Switch

Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers • Sourced from Process 51. • Source & Drain are interchangeable.

丝印代码：6S；N-Channel Switch

Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices

N 沟道开关

N沟道开关 该器件设计用于低电平模拟开关、采样保持电路以及斩波器稳定放大器。 采用工艺51设计。

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：JFET N-CH 35V 350MW SOT23 分立半导体产品 晶体管 - JFET

丝印代码：6S；N-Channel Switch

文件：488.24 Kbytes Page：13 Pages

丝印代码：6S；This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers

文件：157.1 Kbytes Page：6 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages