70 V 开关二极管

The switching diode is designed for high speed switching applications.This device is housed in a SOT-23 surface mount package which is ideal for automated insertion. • Extremely Low Minority Carrier Lifetime\n• Low Reverse Leakage\n• Pb-Free Packages are Available\n;

MONOLITHIC DUAL SWITCHING DIODE

Switching Diode

Switching Diode

Switching Diode

Switching Diode

Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Switching Diode

Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Switching Diode

MONOLITHIC DUAL SWITCHING DIODE

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Switching Diode

文件：126.69 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 70V 200MA SOT23-3 分立半导体产品 二极管 - 整流器 - 单

Switching Diode

文件：126.69 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：DIODE GEN PURP 70V 200MA SOT23-3 分立半导体产品 二极管 - 整流器 - 单

Switching Diode

文件：126.69 Kbytes Page：3 Pages

SWITCHING DIODE

Switching Diode

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications