MMBD452价格

参考价格:¥0.2825

型号:MMBD452LT1G 品牌:ONSemi 备注:这里有MMBD452多少钱,2025年最近7天走势,今日出价,今日竞价,MMBD452批发/采购报价,MMBD452行情走势销售排行榜,MMBD452报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBD452

Dual Hot-Carrier Diodes

FEATURES ● Very low capacitance. ● Extremely low minority carrier lifetime. ● Low reverse leakage. ● Power dissipation Pd=225mW. APPLICATIONS ● Designed primarily for UHF and VHF detector applications.

DSK

MMBD452

Dual Hot-Carrier Diodes

FEATURES ● Very low capacitance. ● Extremely low minority carrier lifetime. ● Low reverse leakage. ● Power dissipation Pd=225mW. APPLICATIONS ● Designed primarily for UHF and VHF detector applications.

BILIN

银河微电

MMBD452

SURFACE MOUNT SCHOTTKY DIODE

FEATURES Low Capacitance : 1.5pF(Max)at VR=15V Very Low VF : 0.36V (Typ) at IF = 1mA Extremely Fast Switching Speed Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free)

PANJIT

強茂

MMBD452

SURFACE MOUNT SCHOTTKY DIODE

VOLTAGE 30 Volts POWER 200mWatts FEATURES • Low Capacitance : 1.5pF(Max)at VR=15V • Very Low VF : 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA

PANJIT

強茂

MMBD452

Dual Hot Carrier Mixer Diodes

Features ◇ Very low capacitance. ◇ Extremely low minority carrier lifetime. ◇ Low reverse leakage. ◇ Power dissipation Pd=225mW. Applications ◇ Designed primarily for UHF and VHF detector applications.

LUGUANG

鲁光电子

MMBD452

Dual Hot Carrier Mixer Diodes

文件:1.09964 Mbytes Page:2 Pages

LUGUANG

鲁光电子

MMBD452

Schottky Barrier Diodes

文件:212.41 Kbytes Page:3 Pages

BILIN

银河微电

DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Dual Hot?묬arrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Dual Hot?묬arrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Dual Hot?묬arrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Dual Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Dual Hot-Carrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Dual Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirem

ONSEMI

安森美半导体

Schottky Barrier Diodes

文件:212.41 Kbytes Page:3 Pages

BILIN

银河微电

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:SURFACE MOUNT SCHOTTKY DIODE 分立半导体产品 二极管 - 整流器 - 阵列

PANJIT

強茂

Dual Hot Carrier Mixer Diodes

文件:1.09964 Mbytes Page:2 Pages

LUGUANG

鲁光电子

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:DIODE SCHOTTKY 30V 225MW SOT23-3 分立半导体产品 二极管 - 射频

ONSEMI

安森美半导体

GAS DISCHARGE TUBE - 8x10mm

This product is not recommended for new designs. Please refer to Littelfuse series SL1021A. 3-electrode (20kA/10A) Enhanced Discharge Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protecti

Littelfuse

力特

NANO2 SIO-BIO Fuse 452/454 Series

文件:110.99 Kbytes Page:1 Pages

Littelfuse

力特

Ribbon Cable Wiremount Socket Assembly

文件:126.46 Kbytes Page:2 Pages

3M

Ribbon Cable Wiremount Socket Assembly

文件:126.46 Kbytes Page:2 Pages

3M

3M Scotch-Weld??Instant Adhesive Activators and Primers

文件:244.13 Kbytes Page:3 Pages

3M

MMBD452产品属性

  • 类型

    描述

  • 型号

    MMBD452

  • 制造商

    PANJIT

  • 制造商全称

    Pan Jit International Inc.

  • 功能描述

    SURFACE MOUNT SCHOTTKY DIODE

更新时间:2025-8-12 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
SOT-23(SOT-23-3)
5124
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON/安森美
21+
SOT-23(SOT-23-3)
8080
只做原装,质量保证
ON/安森美
24+
SOT-23(SOT-23-3)
30000
原装正品公司现货,假一赔十!
ONSEMI/安森美
25+
SOT23
20300
ONSEMI/安森美原装特价MMBD452LT1G即刻询购立享优惠#长期有货
PANJIT/强茂
23+
SOT-23
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
三年内
1983
只做原装正品
ON/安森美
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON/安森美
23+
SOT-23
24190
原装正品代理渠道价格优势
PANJIT
23+
SOT-23
50000
全新原装正品现货,支持订货
ON(安森美)
2324+
SOT-23(SOT-23-3)
78920
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口

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