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MMBD353价格

参考价格:¥0.3202

型号:MMBD353LT1G 品牌:ON 备注:这里有MMBD353多少钱,2026年最近7天走势,今日出价,今日竞价,MMBD353批发/采购报价,MMBD353行情走势销售排行榜,MMBD353报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMBD353

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes Features Very low capacitance—Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications —Designed primarily for UHF mixer applications. — — —

LUGUANG

鲁光电子

MMBD353

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

WTE

Won-Top Electronics

MMBD353

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件:133.89 Kbytes Page:3 Pages

PANJIT

強茂

MMBD353

Schottky Diodes

WTE

Won-Top Electronics

MMBD353

小信号肖特基二极管

LUGUANG

鲁光电子

MMBD353

- A,7V,Surface Mount Small Signal Schottky Diodes

GALAXY

银河微电

MMBD353

Dual Hot Carrier Mixer Diodes

文件:229.52 Kbytes Page:3 Pages

DSK

MMBD353

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件:84.98 Kbytes Page:3 Pages

PANJIT

強茂

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA

LRC

乐山无线电

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA

MOTOROLA

摩托罗拉

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

ONSEMI

安森美半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

WTE

Won-Top Electronics

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

PANJIT

強茂

Dual Hot Carrier Mixer Diodes

文件:93.76 Kbytes Page:3 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件:93.76 Kbytes Page:3 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件:122.87 Kbytes Page:3 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件:93.76 Kbytes Page:3 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件:122.87 Kbytes Page:3 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件:93.76 Kbytes Page:3 Pages

ONSEMI

安森美半导体

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

MOTOROLA

摩托罗拉

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

MOTOROLA

摩托罗拉

DUAL J-FET INPUT OPERATIONAL AMPLIFIER

文件:266.72 Kbytes Page:7 Pages

NJRC

日本无线

DUAL J-FET INPUT OPERATIONAL AMPLIFIER

文件:266.72 Kbytes Page:7 Pages

NJRC

日本无线

DUAL J-FET INPUT OPERATIONAL AMPLIFIER

文件:266.72 Kbytes Page:7 Pages

NJRC

日本无线

MMBD353产品属性

  • 类型

    描述

  • VRRM_Max_(V):

    7

  • VF_Max_(V):

    0.6

  • @ IF (A):

    0.01

  • IR_Max_(uA):

    10

  • @VR (V):

    7

  • Pin:

    F7

  • Package_Outlines:

    SOT-23

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
SOT-23-3(TO-236)
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
SOT-23-3(TO-236)
20948
样件支持,可原厂排单订货!
ON
22+
SOT23
20000
公司只做原装 品质保障
ONSEMI/安森美
25+
SOT-23
17703
ONSEMI/安森美原装特价MMBD353LT1G即刻询购立享优惠#长期有货
MOTOROLA
23+
NA
1795
专做原装正品,假一罚百!
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON
2016+
SOT23
2220
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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