位置：首页 > IC中文资料第2341页 > MMBD353LT1
MMBD353LT1价格
参考价格：￥0.3202
型号：MMBD353LT1G 品牌：ON 备注：这里有MMBD353LT1多少钱，2026年最近7天走势，今日出价，今日竞价，MMBD353LT1批发/采购报价，MMBD353LT1行情走势销售排行榜，MMBD353LT1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD353LT1 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 |   | |
MMBD353LT1 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | |
MMBD353LT1 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | MOTOROLA 摩托罗拉 | | |
MMBD353LT1 | Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.\n\n• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts\n• Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | |
MMBD353LT1 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | |
MMBD353LT1 | Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | |
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | |
MMBD353LT1产品属性
- 类型
描述
- 型号
MMBD353LT1
- 功能描述
整流器 7V 225mW Dual
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂 |
2021+ |
60000 |
原装现货，欢迎询价 |
||||
ON |
22+ |
SOT23 |
20000 |
公司只做原装 品质保障 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MOTOROLA/摩托罗拉 |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
25+ |
SOT23 |
3000 |
现货 |
|||
onsemi |
25+ |
SOT-23-3(TO-236) |
20948 |
样件支持,可原厂排单订货! |
|||
26+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ONSEMI/安森美 |
25+ |
SOT-23 |
90000 |
全新原装现货 |
|||
ON(安森美) |
25+ |
NA |
18000 |
原装优势现货 |
MMBD353LT1芯片相关品牌
MMBD353LT1规格书下载地址
MMBD353LT1参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MMBT42
- MMBT28S
- MMBT200
- MMBT100
- MMBR951
- MMBR941
- MMBR931
- MMBR930
- MMBR920
- MMBR911
- MMBR571
- MMBF170
- MMBF102
- MMBD914
- MMBD770
- MMBD717
- MMBD701
- MMBD452
- MMBD4148SE-TP
- MMBD4148SE(D4)
- MMBD4148SE
- MMBD4148PLM-7
- MMBD4148LT1
- MMBD4148CC-TP
- MMBD4148CC
- MMBD4148CA-TP
- MMBD4148CA
- MMBD4148-7-F
- MMBD4148-7
- MMBD4148-13-F
- MMBD4148_R1_00001
- MMBD4148_D87Z
- MMBD4148,215
- MMBD4148
- MMBD355LT1G
- MMBD355
- MMBD354LT1G
- MMBD354
- MMBD353LT1G/BKN
- MMBD353LT1G
- MMBD353
- MMBD352WT1G
- MMBD352LT1G
- MMBD352LT1
- MMBD352
- MMBD330T1G
- MMBD330
- MMBD318
- MMBD301-TP
- MMBD301M3T5G/BKN
- MMBD301M3T5G
- MMBD301LT3G
- MMBD301LT1G
- MMBD301
- MMBD3004S-7-F
- MMBD3004C-7-F
- MMBD3004BRM-7-F
- MMBD3004A-7-F
- MMBD2838LT1G
- MMBD2838
- MMBD2837LT1G
- MMBD2837LT1
- MMBD2836LT1G
- MMBD2835LT1G
- MMBD248
- MMBD2004SW-7-F
- MMBD193
- MMBD101
- MMBA_15
- MMB8G
- MMB6G
- MMB4G
- MMB358W
- MMB358
- MMB356W
- MMB356
- MMB354W
- MMB354
- MMB352W
- MMB352
MMBD353LT1数据表相关新闻
MMB02070C1960FB700
进口代理
2024-9-24MMA8652FCR1
进口代理
2023-4-10MMBD7000LT1G 开关二极管 SOT-23
现货100K 品牌 ON/安森美
2022-7-4MMA8652FCR1 加速计 3-axis 2g/4g/8g 12 bit
供应恩智浦原装现货MMA8652FCR1 加速计 3-axis 2g/4g/8g 12 bit，DFN10
2022-3-28MMBD7000 CJ/长电 SOT-23 支持原装长电订货型号，欢迎咨询！
MMBD7000 CJ/长电 SOT-23
2021-5-15MMBF4393LT1G
商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） - 漏源电压（Vdss） - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散（Ta=25°C） 225mW
2020-11-12
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
