High Conductance Low Leakage Diode

High Conductance Low Leakage Diode

丝印代码：88A；High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1T.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：DIODE ARRAY GP 30V 50MA SOT23-3 分立半导体产品 二极管 - 整流器 - 阵列

DIODE ARRAY GP 30V 50MA SOT23-3

800MHz BAND FRONT-END GaAs MMIC

GENERAL DESCRIPTION NJG1704V is a front-end GaAs MMIC including a LNA, local amplifier and MIXER, designed mainly for 800MHz band cellular phone. NJG1704V exhibits low noise of 1.7dB at low total current consumption of 9.0mA. FEATURES Low voltage operation +2.7V typ. Low current cons

800MHz BAND FRONT-END GaAs MMIC

GENERAL DESCRIPTION NJG1704V is a front-end GaAs MMIC including a LNA, local amplifier and MIXER, designed mainly for 800MHz band cellular phone. NJG1704V exhibits low noise of 1.7dB at low total current consumption of 9.0mA. FEATURES Low voltage operation +2.7V typ. Low current cons

Integrated Circuit Audio Power Amplifier, 1.2W

Features: • Incorporating Automatic Operating Point Stabilizer • Low Noise • Variable Frequency Characteristics • Few External Components Required

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID