Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CMOS Switching Regulator (PWM controlled)

Outline This IC is a PWM controlled switching regulator developed using the CMOS process. Low ripple and high efficiency of 83 typ. (MM3005E) are achieved through PWM control. Further, output voltage is high precision output ±2.4. Features 1. Ultra low consumption current 17.2µA typ. (during op

CMOS Switching Regulator (PWM controlled)

Outline\nThis IC is a PWM controlled switching regulator developed using the CMOS process. Low ripple and high efficiency of 83% typ. (MM3005E) are achieved through PWM control. Further, output voltage is high precision output ±2.4%. 1. Ultra low consumption current 17.2µA typ. (during operation) (MM3005E)\n2. High efficiency 83% typ. (MM3005E)\n3. High precision output voltage ±2.4%\n4. Wide operating temperature range -30°C~+85°C\n5. Output voltage 2~5.5V (0.1V can be set in 0.1V steps)Applications\n1. Mobile phones, P;

30A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODES

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

RF POWER TRANSISTOR NPN SILICON

The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can