| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MM3006C | CMOS Switching Regulator (PWM controlled) Outline\nThis IC is a PWM controlled switching regulator developed using the CMOS process. Low ripple and high efficiency of 83% typ. (MM3005E) are achieved through PWM control. Further, output voltage is high precision output ±2.4%. 1. Ultra low consumption current 17.2µA typ. (during operation) (MM3005E)\n2. High efficiency 83% typ. (MM3005E)\n3. High precision output voltage ±2.4%\n4. Wide operating temperature range -30°C~+85°C\n5. Output voltage 2~5.5V (0.1V can be set in 0.1V steps)Applications\n1. Mobile phones, P; | MITSUBISHI 三菱电机 | ||
30A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O | WTE Won-Top Electronics | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODES DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and | STMICROELECTRONICS 意法半导体 | |||
RF POWER TRANSISTOR NPN SILICON The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can | MOTOROLA 摩托罗拉 |
MM3006C规格书下载地址
MM3006C参数引脚图相关
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MM3006C数据表相关新闻
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