32.768 kHz Clock Oscillator

Description The MK3200 is ICS’ lowest cost, low power clock oscillator that generates a low power 32.768 kHz output from an inexpensive 32.768 kHz watch crystal. This part includes a power down pin and allows you to tri state the output clock for in-circuit testing. Features • Packaged in 8 pin

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLOCK OSC 32.768KHZ 8-SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

32.768 kHz Clock Oscillator

Description The MK3200 is ICS’ lowest cost, low power clock oscillator that generates a low power 32.768 kHz output from an inexpensive 32.768 kHz watch crystal. This part includes a power down pin and allows you to tri state the output clock for in-circuit testing. Features • Packaged in 8 pin

32.768 kHz Clock Oscillator

Description The MK3200 is ICS’ lowest cost, low power clock oscillator that generates a low power 32.768 kHz output from an inexpensive 32.768 kHz watch crystal. This part includes a power down pin and allows you to tri state the output clock for in-circuit testing. Features • Packaged in 8 pin

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLOCK OSC 32.768KHZ 8-SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

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