LOW EMI CLOCK GENERATOR

Features • 8 pin SOIC package • Pb (lead) free package • Provides a spread spectrum output clock • Supports leading flat panel controllers • Accepts a clock input, provides same frequency dithered output • Optimized for higher resolutions that require up to 140 MHz, as well as 40 MHz (SVGA

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLK GENERATOR LOW EMI 8-SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

LOW EMI CLOCK GENERATOR

Features • 8 pin SOIC package • Pb (lead) free package • Provides a spread spectrum output clock • Supports leading flat panel controllers • Accepts a clock input, provides same frequency dithered output • Optimized for higher resolutions that require up to 140 MHz, as well as 40 MHz (SVGA

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLK GENERATOR LOW EMI 8-SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

800MHz BAND FRONT-END GaAs MMIC

GENERAL DESCRIPTION NJG1704V is a front-end GaAs MMIC including a LNA, local amplifier and MIXER, designed mainly for 800MHz band cellular phone. NJG1704V exhibits low noise of 1.7dB at low total current consumption of 9.0mA. FEATURES Low voltage operation +2.7V typ. Low current cons

800MHz BAND FRONT-END GaAs MMIC

GENERAL DESCRIPTION NJG1704V is a front-end GaAs MMIC including a LNA, local amplifier and MIXER, designed mainly for 800MHz band cellular phone. NJG1704V exhibits low noise of 1.7dB at low total current consumption of 9.0mA. FEATURES Low voltage operation +2.7V typ. Low current cons

Integrated Circuit Audio Power Amplifier, 1.2W

Features: • Incorporating Automatic Operating Point Stabilizer • Low Noise • Variable Frequency Characteristics • Few External Components Required

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID