MJW21195价格

参考价格:¥13.0977

型号:MJW21195G 品牌:ONSemi 备注:这里有MJW21195多少钱,2025年最近7天走势,今日出价,今日竞价,MJW21195批发/采购报价,MJW21195行情走势销售排行榜,MJW21195报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJW21195

Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN) The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features •Total Harmonic Distortion Characterized •High DC Current Gain −hFE= 2

ONSEMI

安森美半导体

MJW21195

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain − hFE = 20 Min @ IC = 8 Adc  Excellent Gain Lin

ONSEMI

安森美半导体

MJW21195

Silicon Power Transistors

文件:163.26 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MJW21195

Silicon PNP Power Transistor

文件:418.86 Kbytes Page:2 Pages

ISC

无锡固电

MJW21195

封装/外壳:TO-247-3 包装:散装 描述:TRANS PNP 250V 16A TO247-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJW21195

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

文件:75.38 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MJW21195

音频功放晶体管

thundersoft

中科创达

MJW21195

音频三极管

FOSHAN

蓝箭电子

MJW21195

Bipolar Transistor, PNP, 250 V, 16 A

ONSEMI

安森美半导体

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain − hFE = 20 Min @ IC = 8 Adc  Excellent Gain Lin

ONSEMI

安森美半导体

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain − hFE = 20 Min @ IC = 8 Adc  Excellent Gain Lin

ONSEMI

安森美半导体

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

文件:75.38 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Silicon Power Transistors

文件:163.26 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:散装 描述:TRANS PNP 250V 16A TO247-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

文件:75.38 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Silicon Power Transistors

文件:163.26 Kbytes Page:7 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE = 25 Min @ IC = 8 Ad

ONSEMI

安森美半导体

Silicon Power Transistors

文件:83.23 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistor

文件:131.02 Kbytes Page:2 Pages

ISC

无锡固电

Silicon Power Transistors

文件:159.5 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Power Transistors

文件:83.23 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJW21195产品属性

  • 类型

    描述

  • 型号

    MJW21195

  • 功能描述

    两极晶体管 - BJT 16A 250V 200W PNP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-8 14:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
TO-247-3
6000
十年配单,只做原装
24+
5000
公司存货
ONSEMI
21+
TO-247
6843
百域芯优势 实单必成 可开13点增值税
ON/安森美
23+
NA
12730
原装正品代理渠道价格优势
ONSEMICONDU
24+
原装进口原厂原包接受订货
20305
原装现货假一罚十
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON
23+
TO247
50000
全新原装正品现货,支持订货
ON
23+
TO-247
56000
ON(安森美)
2511
标准封装
8000
电子元器件采购降本30%!原厂直采,砍掉中间差价
ON/安森美
23+
TO-247
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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