MJE700晶体管资料
MJE700别名：MJE700三极管、MJE700晶体管、MJE700晶体三极管
MJE700生产厂家：美国摩托罗拉半导体公司
MJE700制作材料：Si-P+Darl+Di
MJE700性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
MJE700封装形式：直插封装
MJE700极限工作电压：60V
MJE700最大电流允许值：4A
MJE700最大工作频率：>1MHZ
MJE700引脚数：3
MJE700最大耗散功率：40W
MJE700放大倍数：β>750
MJE700图片代号：B-21
MJE700vtest：60
MJE700htest：1000100
- MJE700atest：4
MJE700wtest：40
MJE700代换 MJE700用什么型号代替：BD262,BD678,BD778,FC50B,2N6035,2N6036,
MJE700价格
参考价格：￥1.0567
型号：MJE700G 品牌：ON 备注：这里有MJE700多少钱，2026年最近7天走势，今日出价，今日竞价，MJE700批发/采购报价，MJE700行情走势销售排行榜，MJE700报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE700 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 |   | |
MJE700 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 | | |
MJE700 | NPN (HIGH DC CURRENT GAIN)
| SAMSUNG 三星 | | |
MJE700 | Monolithic Construction With Built-in Base- Emitter Resistors Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 | FAIRCHILD 仙童半导体 | | |
MJE700 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V • DC Current Gain— : hFE = 750(Min) @ IC=-1.5 A • Complement to Type MJE800 APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | |
MJE700 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. | CENTRAL | | |
MJE700 | Plastic Darlington Complementary Silicon Power Transistors ... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJE700 | 4.0 A，60 V，PNP 达林顿双极功率晶体管 The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices. • High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc\n• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication\n• Choice of Packages- MJE700 and MJE800 series\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | | |
MJE700 | Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | CENTRAL | | |
MJE700 | Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-126 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJE700 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件：84.77 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 | | ||
Plastic Darlington Complementary Silicon Power Transistors ... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V • DC Current Gain— : hFE = 750(Min) @ IC=-1.5A • Complement to Type MJE800T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | ||
DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件：84.77 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件：84.77 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 60V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | | ||
0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) 0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer | MOTOROLA 摩托罗拉 | |
MJE700产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Polarity：
PNP
- IC Continuous (A)：
4
- V(BR)CEO Min (V)：
60
- VCE(sat) Max (V)：
2.5
- hFE Min (k)：
0.75
- Package Type：
TO-225-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-126 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
onsemi(安森美) |
24+ |
TO-126 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI/安森美 |
25+ |
TO-126 |
45000 |
ONSEMI/安森美全新现货MJE700即刻询购立享优惠#长期有排单订 |
|||
onsemi(安森美) |
25+ |
TO-126 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD |
23+ |
TO-126 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
UTG |
23+ |
SOT-89 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
23+ |
TO-126 |
8000 |
只做原装现货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-225AATO-126 |
24190 |
原装正品代理渠道价格优势 |
MJE700规格书下载地址
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DdatasheetPDF页码索引
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