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MJE700晶体管资料

  • MJE700别名：MJE700三极管、MJE700晶体管、MJE700晶体三极管

  • MJE700生产厂家：美国摩托罗拉半导体公司

  • MJE700制作材料：Si-P+Darl+Di

  • MJE700性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • MJE700封装形式：直插封装

  • MJE700极限工作电压：60V

  • MJE700最大电流允许值：4A

  • MJE700最大工作频率：>1MHZ

  • MJE700引脚数：3

  • MJE700最大耗散功率：40W

  • MJE700放大倍数：β>750

  • MJE700图片代号：B-21

  • MJE700vtest：60

  • MJE700htest：1000100

  • MJE700atest：4

  • MJE700wtest：40

  • MJE700代换 MJE700用什么型号代替：BD262,BD678,BD778,FC50B,2N6035,2N6036,

MJE700价格

参考价格：￥1.0567

型号：MJE700G 品牌：ON 备注：这里有MJE700多少钱，2024年最近7天走势，今日出价，今日竞价，MJE700批发/采购报价，MJE700行情走势销售排行榜，MJE700报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE700

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung Group

三星三星半导体

Samsung
MJE700

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC •ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE700

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterBreakdownVoltage— :V(BR)CEO=-60V •DCCurrentGain— :hFE=750(Min)@IC=-1.5A •ComplementtoTypeMJE800 APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE700

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJE700

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700T

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE700T

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=-60V •DCCurrentGain—:hFE=750(Min)@IC=-1.5A •ComplementtoTypeMJE800T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE700T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPEC

MOSPEC

MOSPEC
MJE700T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE700_06

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700G

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE700STU

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 60V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
700

PHENOLICINSTRUMENTCASES

[KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
700

RECTIFIERSASSEMBLIESTHREEPHASEBRIDGES,2.5AMP,STANDARDANDFASTRECOVERY

ThreePhaseBridges,2.5Amp,StandardandFastRecovery FEATURES •MiniaturePackage •RecoveryTime:to500ns •SurgeRatings:to25A •PIV:from100to600V •ControlledAvalancheCharacteristics •OnlyFused-in-GlassDiodesUsed

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
700

Highlycompliant

文件：296.43 Kbytes Page：2 Pages

LSTD

Laird Tech Smart Technology

LSTD
700

TemperatureSensorsLineGuide

文件：736.09 Kbytes Page：11 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell
700

PUSHBUTTONSWITCHES-SNAP-ACTING

文件：525.6 Kbytes Page：6 Pages

E-SWITCH

E-Switch, Inc.

E-SWITCH

MJE700产品属性

  • 类型

    描述

  • 型号

    MJE700

  • 功能描述

    达林顿晶体管 4A 60V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJE700供应商更多...

更新时间：2024-4-25 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
MJE700
FAIRCHI
2020+
TO-126
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市金芯世纪电子有限公司
MJE700
ON/安森美
22+
TO126
100000
代理渠道/只做原装/可含税
询价
深圳市明嘉莱科技有限公司
MJE700
FAIRCHILD/仙童
24+
TO126F
990000
明嘉莱只做原装正品现货
询价
深圳市卓越微芯电子有限公司
MJE700
FAIRCHILD
2020+
TO126F
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市高捷芯城科技有限公司
MJE700
onsemi(安森美)
23+
TO-126
1259
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
MJE700
ON/安森美
23+
NA/
2250
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市环球伟业电子有限公司
MJE700
Fairchild/Fairchild Semiconduc
21+
TO-126
60
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科恒伟业电子有限公司
MJE700
ON/ST
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
询价
深圳市鑫宇杨电子科技有限公司
MJE700
ON
2020+
TO-126
350000
100%进口原装正品公司现货库存
询价
深圳市华瑞顺电子科技有限公司
MJE700G
ON/安森美
22+
TO-126
12800
本公司只做原装,特价出售!
询价

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MJE700规格书下载地址

MJE700参数引脚图相关

MJE700数据表相关新闻

DdatasheetPDF页码索引

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