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MJE700晶体管资料

  • MJE700别名：MJE700三极管、MJE700晶体管、MJE700晶体三极管

  • MJE700生产厂家：美国摩托罗拉半导体公司

  • MJE700制作材料：Si-P+Darl+Di

  • MJE700性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • MJE700封装形式：直插封装

  • MJE700极限工作电压：60V

  • MJE700最大电流允许值：4A

  • MJE700最大工作频率：>1MHZ

  • MJE700引脚数：3

  • MJE700最大耗散功率：40W

  • MJE700放大倍数：β>750

  • MJE700图片代号：B-21

  • MJE700vtest：60

  • MJE700htest：1000100

  • MJE700atest：4

  • MJE700wtest：40

  • MJE700代换 MJE700用什么型号代替：BD262,BD678,BD778,FC50B,2N6035,2N6036,

MJE700价格

参考价格：￥1.0567

型号：MJE700G 品牌：ON 备注：这里有MJE700多少钱，2025年最近7天走势，今日出价，今日竞价，MJE700批发/采购报价，MJE700行情走势销售排行榜，MJE700报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE700

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Motorola

摩托罗拉

MJE700

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE700

NPN (HIGH DC CURRENT GAIN)

Samsung

三星

MJE700

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803

Fairchild

仙童半导体

MJE700

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V • DC Current Gain— : hFE = 750(Min) @ IC=-1.5 A • Complement to Type MJE800 APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

ISC

无锡固电

MJE700

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

Central

MJE700

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE700

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Central

MJE700

Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-126

ETC

知名厂家

MJE700

4.0 A，60 V，PNP 达林顿双极功率晶体管

ONSEMI

安森美半导体

MJE700

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE700G

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE700T

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE700T

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V • DC Current Gain— : hFE = 750(Min) @ IC=-1.5A • Complement to Type MJE800T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

ISC

无锡固电

MJE700T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

MJE700T

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE700T

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Motorola

摩托罗拉

MJE700_06

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE700G

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE700G

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE700STU

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 60V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

700

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

ETCList of Unclassifed Manufacturers

未分类制造商

700

RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 2.5 AMP, STANDARD AND FAST RECOVERY

Three Phase Bridges, 2.5 Amp, Standard and Fast Recovery FEATURES • Miniature Package • Recovery Time : to 500 ns • Surge Ratings : to 25 A • PIV : from 100 to 600 V • Controlled Avalanche Characteristics • Only Fused-in-Glass Diodes Used

Microsemi

美高森美

700

Highly compliant

文件：296.43 Kbytes Page：2 Pages

LSTD

莱尔德

700

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

Honeywell

霍尼韦尔

700

PUSHBUTTON SWITCHES - SNAP-ACTING

文件：525.6 Kbytes Page：6 Pages

E-SWITCH

MJE700产品属性

  • 类型

    描述

  • 型号

    MJE700

  • 功能描述

    达林顿晶体管 4A 60V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJE700供应商更多...

更新时间：2025-11-23 8:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJE700
onsemi(安森美)
24+
TO-126
1259
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市明嘉莱科技有限公司
MJE700
FAIRCHILD/仙童
24+
TO126F
990000
明嘉莱只做原装正品现货
询价
深圳市金芯世纪电子有限公司
MJE700
ON/安森美
22+
TO126
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
MJE700
ON/安森美
24+
NA/
2250
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科芯源微电子有限公司
MJE700
FAIRCHILD/仙童
25+
TO126F
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市威雅利发展有限公司
MJE700
FAIRCHILD
0034+
TO-126
60
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
中天科工半导体（深圳）有限公司
MJE700
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货MJE700即刻询购立享优惠#长期有排单订
询价
深圳市华斯顿科技有限公司
MJE700G
ON进口
25+23+
TO-126
55335
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市百诺芯科技有限公司
MJE700
MOTOROLA/摩托罗拉
23+
TO-225AATO-126
24190
原装正品代理渠道价格优势
询价
深圳市一线半导体有限公司
MJE700
24+
5600
询价

MJE700芯片相关品牌

MJE700规格书下载地址

MJE700参数引脚图相关

MJE700数据表相关新闻

DdatasheetPDF页码索引

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