SILICON COMPLEMENTARY POWER TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE370, MJE520 types are Complementary Silicon Power Transistors designed for use in general purpose amplifier and switching applications.

SILICON COMPLEMENTARY POWER TRANSISTORS

SILICON COMPLEMENTARY POWER TRANSISTORS MJE370, MJE520 types are Complementary Silicon Power Transistors designed for use in general purpose amplifier and switching applications.

SILICON NPN TRANSISTOR

DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. ■ STMicroelectronics PREFERRED SALESTYPE

功率 4A 40V NPN 硅

...适用于通用型放大器和开关电路。推荐用于使用互补对称电路的 5 到 10 W 音频放大器。 • DC Current GainhFE = 40 (Min) @ IC= 1.0 Adc\n• Complementary to PNP MJE371\n• Pb-Free Package is Available;

Plastic Medium?뭁ower NPN Silicon Transistor

These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Co

SILICON COMPLEMENTRY POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE371, MJE521 types are Complementary Silicon Power Transistors designed for use in general amplifier and switching applications.

4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= 1A • Complement to Type MJE371 APPLICATIONS • Designed for use in general−purpose amplifier and switching circuits applications.

Plastic Medium?뭁ower NPN Silicon Transistor

These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Co

SILICON COMPLEMENTRY POWER TRANSISTOR

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isc Silicon NPN Power Transistor

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Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 40V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 40V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

SILICON NPN TRANSISTOR

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SILICON NPN TRANSISTOR

文件：45.84 Kbytes Page：4 Pages

isc Silicon NPN Power Transistor

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