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MJE52晶体管资料
MJE52别名：MJE52三极管、MJE52晶体管、MJE52晶体三极管
MJE52生产厂家：美国摩托罗拉半导体公司
MJE52制作材料：
MJE52性质：低频或音频放大 （LF）_功率放大 （PA）
MJE52封装形式：直插封装
MJE52极限工作电压：400V
MJE52最大电流允许值：5A
MJE52最大工作频率：<1MHZ或未知
MJE52引脚数：3
MJE52最大耗散功率：80W
MJE52放大倍数：
MJE52图片代号：D-8
MJE52vtest：400
MJE52htest：999900
- MJE52atest：5
MJE52wtest：80
MJE52代换 MJE52用什么型号代替：
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON COMPLEMENTARY POWER TRANSISTORS SILICON COMPLEMENTARY POWER TRANSISTORS MJE370, MJE520 types are Complementary Silicon Power Transistors designed for use in general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |   | ||
SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR MJE370, MJE520 types are Complementary Silicon Power Transistors designed for use in general purpose amplifier and switching applications. | Central | | ||
4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to | Motorola 摩托罗拉 | | ||
SILICON NPN TRANSISTOR DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. ■ STMicroelectronics PREFERRED SALESTYPE | STMICROELECTRONICS 意法半导体 | | ||
Plastic Medium?뭁ower NPN Silicon Transistor These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Co | ONSEMI 安森美半导体 | | ||
SILICON COMPLEMENTRY POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MJE371, MJE521 types are Complementary Silicon Power Transistors designed for use in general amplifier and switching applications. | Central | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= 1A • Complement to Type MJE371 APPLICATIONS • Designed for use in general−purpose amplifier and switching circuits applications. | ISC 无锡固电 | | ||
Plastic Medium?뭁ower NPN Silicon Transistor These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Co | ONSEMI 安森美半导体 | | ||
SILICON COMPLEMENTRY POWER TRANSISTOR 文件：77.76 Kbytes Page：1 Pages | Central | | ||
isc Silicon NPN Power Transistor 文件：258.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 40V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 40V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
SILICON NPN TRANSISTOR 文件：45.84 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | ||
SILICON NPN TRANSISTOR 文件：45.84 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | ||
isc Silicon NPN Power Transistor 文件：107.26 Kbytes Page：2 Pages | ISC 无锡固电 | |
MJE52产品属性
- 类型
描述
- 型号
MJE52
- 制造商
Motorola Inc
- 功能描述
Bipolar Junction Transistor, NPN Type, TO-126
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON SEMI |
0047- |
378 |
公司优势库存 热卖中! |
||||
ON |
24+ |
N/A |
5000 |
公司存货 |
|||
ST |
23+ |
TO-225AATO-126 |
24190 |
原装正品代理渠道价格优势 |
|||
ON/安森美 |
2447 |
TO-126 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
22+ |
TO-126 |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
343 |
TO126 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
22+ |
TO-126 |
6000 |
十年配单,只做原装 |
|||
ON |
24+ |
TO-126 |
6430 |
原装现货/欢迎来电咨询 |
|||
ST |
23+ |
TO126 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
MJE52规格书下载地址
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