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MJE51晶体管资料

  • MJE51别名:MJE51三极管、MJE51晶体管、MJE51晶体三极管

  • MJE51生产厂家:美国摩托罗拉半导体公司

  • MJE51制作材料

  • MJE51性质:低频或音频放大 (LF)_功率放大 (PA)

  • MJE51封装形式:直插封装

  • MJE51极限工作电压:350V

  • MJE51最大电流允许值:5A

  • MJE51最大工作频率:<1MHZ或未知

  • MJE51引脚数:3

  • MJE51最大耗散功率:80W

  • MJE51放大倍数

  • MJE51图片代号:D-8

  • MJE51vtest:350

  • MJE51htest:999900

  • MJE51atest:5

  • MJE51wtest:80

  • MJE51代换 MJE51用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

isc Silicon PNP Power Transistors

文件:114.64 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistors

文件:114.64 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistors

文件:114.64 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

文件:114.59 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

文件:114.59 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

文件:114.59 Kbytes Page:2 Pages

ISC

无锡固电

Trans GP BJT NPN 80V 4A 3-Pin TO-225AA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

文件:110.64 Kbytes Page:2 Pages

ISC

无锡固电

MJE51产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    80V

  • Maximum Collector Emitter Saturation Voltage:

    0.6@0.15A@1.5A1.4@1A@4A

  • Maximum Collector Emitter Voltage:

    80V

  • Maximum DC Collector Current:

    4A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    60000mW

  • Maximum Transition Frequency:

    2(Min)MHz

  • Type:

    NPN

更新时间:2026-5-19 14:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
TO-220
96211
ON/安森美
22+
TO-220
6000
十年配单,只做原装

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