SILICON COMPLEMENTRY POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE371, MJE521 types are Complementary Silicon Power Transistors designed for use in general amplifier and switching applications.

4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power PNP Silicon Transistors . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • MJE371 is Compl

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 40(Min) @ IC= -1A ·Complement to Type MJE521 APPLICATIONS ·Designed for use in general-purpose amplifier and switching circuits. ·Recommended for use in 5~20 Watt audio a

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits, ·Recommended for use in 5 to 20 W audio amplifiers utilizing complementary symmetry circuity

Plastic Medium?뭁ower PNP Silicon Transistor

Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc

4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS

Trans GP BJT PNP 40V 4A 3-Pin TO-225 Bulk

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

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Plastic Medium-Power PNP Silicon Transistor

Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc

Plastic Medium?뭁ower PNP Silicon Transistor

Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 40V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 3400 V Mean forward current 920 A Surge current 5.6 kA

Symbol MULTILED 5 mm T1 3/4, Partly Diffused

Features ● partly diffused, colorless package ● 2.54 mm lead spacing ● high signal efficiency by color change of the LED from green to yellow and orange to superred ● ideal for multiplexed or pulsed operations ● both colors can be controlled separately ● solder leads with stand-off ● availa

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode

Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications

Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features • Excellent large-input characteristics because of dual varactor composite type. • The number of manufacturing processes can be reduced and automatic mounting is possible because of composite type. • H