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MJE371晶体管资料

  • MJE371别名:MJE371三极管、MJE371晶体管、MJE371晶体三极管

  • MJE371生产厂家:美国摩托罗拉半导体公司

  • MJE371制作材料:Si-PNP

  • MJE371性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE371封装形式:直插封装

  • MJE371极限工作电压:40V

  • MJE371最大电流允许值:4A

  • MJE371最大工作频率:<1MHZ或未知

  • MJE371引脚数:3

  • MJE371最大耗散功率:40W

  • MJE371放大倍数

  • MJE371图片代号:B-21

  • MJE371vtest:40

  • MJE371htest:999900

  • MJE371atest:4

  • MJE371wtest:40

  • MJE371代换 MJE371用什么型号代替:BD188,BD198,CD42,

MJE371价格

参考价格:¥4.8898

型号:MJE371 品牌:Centralr 备注:这里有MJE371多少钱,2026年最近7天走势,今日出价,今日竞价,MJE371批发/采购报价,MJE371行情走势销售排行榜,MJE371报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE371

SILICON COMPLEMENTRY POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE371, MJE521 types are Complementary Silicon Power Transistors designed for use in general amplifier and switching applications.

CENTRAL

MJE371

4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power PNP Silicon Transistors . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • MJE371 is Compl

MOTOROLA

摩托罗拉

MJE371

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 40(Min) @ IC= -1A ·Complement to Type MJE521 APPLICATIONS ·Designed for use in general-purpose amplifier and switching circuits. ·Recommended for use in 5~20 Watt audio a

ISC

无锡固电

MJE371

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits, ·Recommended for use in 5 to 20 W audio amplifiers utilizing complementary symmetry circuity

SAVANTIC

MJE371

Plastic Medium?뭁ower PNP Silicon Transistor

Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc

ONSEMI

安森美半导体

MJE371

4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS

ETC

知名厂家

MJE371

Trans GP BJT PNP 40V 4A 3-Pin TO-225 Bulk

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE371

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

CENTRAL

MJE371

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS PNP 40V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJE371

Silicon PNP Power Transistors

文件:101.6 Kbytes Page:3 Pages

SAVANTIC

Plastic Medium-Power PNP Silicon Transistor

Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc

ONSEMI

安森美半导体

Plastic Medium?뭁ower PNP Silicon Transistor

Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP 40V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 3400 V Mean forward current 920 A Surge current 5.6 kA

POSEICO

Symbol MULTILED 5 mm T1 3/4, Partly Diffused

Features ● partly diffused, colorless package ● 2.54 mm lead spacing ● high signal efficiency by color change of the LED from green to yellow and orange to superred ● ideal for multiplexed or pulsed operations ● both colors can be controlled separately ● solder leads with stand-off ● availa

SIEMENS

西门子

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode

SANKEN

三垦

Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications

Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features • Excellent large-input characteristics because of dual varactor composite type. • The number of manufacturing processes can be reduced and automatic mounting is possible because of composite type. • H

SANYO

三洋

MJE371产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    General Purpose

  • IC Cont. (A):

    4

  • VCEO Min (V):

    40

  • VCBO (V):

    40

  • VEBO (V):

    4

  • hFE Min:

    40

  • PTM Max (W):

    40

  • Package Type:

    TO-225-3

更新时间:2026-5-19 11:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
26+
SOT-223
86720
全新原装正品价格最实惠 承诺假一赔百
ON
23+
TO-126
11846
一级代理商现货批发,原装正品,假一罚十
ON/安森美
22+
N/A
12245
现货,原厂原装假一罚十!
ON/安森美
23+
TO126
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
onsemi
25+
TO-126
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
三年内
1983
只做原装正品
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
MOTOROLA/摩托罗拉
23+
TO-225AATO-126
24190
原装正品代理渠道价格优势
ST
23+
TO126
12800
公司只有原装 欢迎来电咨询。
ON/安森美
23+
TO-126
50000
全新原装正品现货,支持订货

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