COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The central semiconductor mje240, mje250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-126 CASE MJE240, MJE250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

COMPLEMENTARY SILICON POWER TRANSITORS

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PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Square Type

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