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位置：首页 > IC中文资料 > MJE251

MJE251晶体管资料

  • MJE251别名：MJE251三极管、MJE251晶体管、MJE251晶体三极管

  • MJE251生产厂家：美国摩托罗拉半导体公司

  • MJE251制作材料：Si-PNP

  • MJE251性质：低频或音频放大 （LF）_功率放大 （L）

  • MJE251封装形式：直插封装

  • MJE251极限工作电压：80V

  • MJE251最大电流允许值：4A

  • MJE251最大工作频率：<1MHZ或未知

  • MJE251引脚数：3

  • MJE251最大耗散功率：15W

  • MJE251放大倍数：

  • MJE251图片代号：B-21

  • MJE251vtest：80

  • MJE251htest：999900

  • MJE251atest：4

  • MJE251wtest：15

  • MJE251代换 MJE251用什么型号代替：BD244B,BD590,BD600,3CA8C,

型号 功能描述 生产厂家 企业 LOGO 操作
MJE251

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The central semiconductor mje240, mje250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

CENTRAL

MJE251

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-126 CASE MJE240, MJE250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE251

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

CENTRAL

MJE251

Trans GP BJT PNP 80V 4A 3-Pin TO-126

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE251

COMPLEMENTARY SILICON POWER TRANSITORS

文件：80.93 Kbytes Page：1 Pages

CENTRAL

BFQ251

PNP video transistor

DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high

PHILIPS

飞利浦

NTE251

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

NTE

LN251CAL

Ultra Bright GaAIAs Lamps

文件：29.92 Kbytes Page：1 Pages

PANASONIC

松下

LN251CALU

Ultra Bright GaAIAs Lamps

文件：29.92 Kbytes Page：1 Pages

PANASONIC

松下

LN251RPX

Square Type

文件：30.74 Kbytes Page：1 Pages

PANASONIC

松下

MJE251产品属性

  • 类型

    描述

  • Configuration：

    Single

  • Material：

    Si

  • Maximum Collector Base Voltage：

    80V

  • Maximum Collector Emitter Saturation Voltage：

    0.3@50mA@500mA

  • Maximum Collector Emitter Voltage：

    80V

  • Maximum DC Collector Current：

    4A

  • Maximum Emitter Base Voltage：

    7V

  • Maximum Operating Temperature：

    150°C

  • Maximum Power Dissipation：

    1500mW

  • Maximum Transition Frequency：

    2(Min)MHz

  • Type：

    PNP

MJE251供应商更多...

更新时间：2026-5-22 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
MJE251
ON
24+
N/A
6500
询价

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