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位置：首页 > IC中文资料 > MJE235

MJE235晶体管资料

  • MJE235别名：MJE235三极管、MJE235晶体管、MJE235晶体三极管

  • MJE235生产厂家：美国摩托罗拉半导体公司

  • MJE235制作材料：Si-PNP

  • MJE235性质：低频或音频放大 （LF）_功率放大 （L）

  • MJE235封装形式：直插封装

  • MJE235极限工作电压：60V

  • MJE235最大电流允许值：4A

  • MJE235最大工作频率：<1MHZ或未知

  • MJE235引脚数：3

  • MJE235最大耗散功率：15W

  • MJE235放大倍数：

  • MJE235图片代号：B-21

  • MJE235vtest：60

  • MJE235htest：999900

  • MJE235atest：4

  • MJE235wtest：15

  • MJE235代换 MJE235用什么型号代替：BD190,BD200,SCD373C,

型号 功能描述 生产厂家 企业 LOGO 操作
MJE235

PNP SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE230 series types are PNP silicon power transistors manufactured by the epitaxial-base process designed for general purpose and switching applications.

CENTRAL

MJE235

PNP SILICON POWER TRANSISTOR

文件：92.64 Kbytes Page：1 Pages

CENTRAL

MJE235

Trans GP BJT PNP 60V 4A 3-Pin TO-126

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BFQ235

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

PHILIPS

飞利浦

BFQ235A

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

PHILIPS

飞利浦

NTE235

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

NTE

LM235AH

Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages

NSC

国半

LM235H

Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages

NSC

国半

MJE235产品属性

  • 类型

    描述

  • Configuration：

    Single

  • Material：

    Si

  • Maximum Collector Base Voltage：

    80V

  • Maximum Collector Emitter Saturation Voltage：

    0.3@50mA@500mA2.5@1mA@4A

  • Maximum Collector Emitter Voltage：

    60V

  • Maximum DC Collector Current：

    4A

  • Maximum Emitter Base Voltage：

    7V

  • Maximum Operating Temperature：

    150°C

  • Maximum Power Dissipation：

    1500mW

  • Maximum Transition Frequency：

    10(Typ)MHz

  • Type：

    PNP

MJE235供应商更多...

更新时间：2026-5-19 14:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
MJE235
ON
24+
N/A
5600
询价

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MJE235规格书下载地址

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