NPN SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE220 series types are NPN silicon power transistors, manufactured by the epitaxial-base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER

NPN SILICON POWER TRANSISTOR

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Trans GP BJT NPN 60V 4A 3-Pin TO-126

Dual Photodarlington Small Outline Surface Mount Optocoupler

DESCRIPTION The ILD233T is a high current transfer ratio (CTR) optocoupler. It has a gallium arsenide infrared LED emitter and silicon NPN photodarlington transistor detector. FEATURES • Two channel optocoupler • High current transfer ratio at IF = 1.0 mA, 500 minimum • Isolation test voltag

THREE-TERMINAL 3A-5V POSITIVE VOLTAGE REGULATORS

DESCRIPTION The LM123, LM223, LM323 are three-terminal positive voltage regulators with a preset 5V output and a load driving capability of 3A. New circuit design and processing techniques are used to provide the high output current without sacrificing the regulation characteristics of lower curr

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT

Small Outline Optoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and

DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR DARLINGTON OUTPUT

The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications that require low input current a

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE