SWITCHMODE TM Series NPN Silicon Power Transistor 300 AND 400 VOLTS 40 WATTS

These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. F

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

NPN EPITAXIAL SILICON POWER TRANSISTORS

Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits

SWITCHMODE Series NPN Silicon Power Transistors

DESCRIPTION These devices are designed for high– – voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such as Switching Regulator s, Inverters, Motor Controls,applications Solenoid/Relay drivers and Deflect

SWITCHING REGULATOR APPLICATION.

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A • High Collector Voltage : VCBO=700V.

DISCRETE SEMICONDUCTORS

Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 1.25 W Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V

TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1A • High Collector Voltage : VCBO=700V.

NPN EPITAXIAL SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr

NPN EPITAXIAL SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Power Switching Applications

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Capable of 1.5Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 700V • Operating and storage junction temperature range: -55°C to +150°C •

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power Switching Applications

NPN MJE SERIES TRANSISTORS

● FEATURES： ■ HIGH VOLTAGE CAPABILITY ■ HIGH SPEED SWITCHING ■ WIDE SOA ■ RoHS COMPLIANT ● APPLICATION： ) ■ FLUORESCENT LAMP ■ ELECTRONIC BALLAST ■ ELECTRONIC TRANSFORMER

AC-DC PWM CONTROLLER PRIMARY SWITCHING REGULATORS

DESCRIPTION The AP8010 is a high performance AC-DC off‐line controller for low power battery charger and adapter applications with Universal‐input. It uses Pulse Frequency and Width Modulation (PFWM) method to build discontinuous conduction mode (DCM) flyback power supplies. The AP8010 util

SWITCHMODE Series NPN Silicon Power Transistors

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Silicon NPN Power Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 400V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON POWER TRANSISTOR

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HIGH VOLTAGE CAPABILITY

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NPN Silicon Plastic-Encapsulate Transistor

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TRIPLE DIFFUSED NPN TRANSISTOR

文件：59.41 Kbytes Page：2 Pages

TO-126 PACKAGE

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SWITCHING REGULATOR APPLICATION.

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A • High Collector Voltage : VCBO=700V.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 an

NPN Silicon Plastic-Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1.25Watts of Power Dissipatio

SWITCHING REGULATOR APPLICATION.

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=1A • High Collector Voltage : VCBO=700V.

NPN Silicon Plastic-Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 700V • Operating and storage

High Voltage Fast-switching NPN Power Transistor

DESCRIPTION: The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is

Silicon NPN Power Transistor

DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

SWITCHING REGULATOR APPLICATION.

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A • High Collector Voltage : VCBO=700V.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antipar

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Capable of 1.25Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 700V • Operating and storage junction temperature range: -55°C to +150°C • Epox

General Purpose NPN Epitaxial Planar Transistor

Features • High breakdown voltage, VCEO=400V (min.) • High collector current, IC(max)=1.5A (DC) • Pb-free package

Silicon NPN transistor in a TO-92 Plastic Package.

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting ballast applications, converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-126(R) Plastic Package

Description Silicon NPN transistor in a TO-126(R) Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

Silicon NPN transistor in a SOT-89 Plastic Package.

Description Silicon NPN transistor in a SOT-89 Plastic Package. Features High Speed Switching Applications High frequency electronic lighting ballast applications,converters, inverters switching ,regulators, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antipar

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antipar

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antipar

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antipar

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antipar

Silicon NPN transistor in a TO-92 Plastic Package.

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-251 Plastic Package.

Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-126(R) Plastic Package

Descriptions Silicon NPN transistor in a TO-126(R) Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-92 Plastic Package.

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-251 Plastic Package.

Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-126(R) Plastic Package

Descriptions Silicon NPN transistor in a TO-126(R) Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting ballast applications,converters, inverters switching regulators, etc .

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Ant