Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -40V(Min) ·Low Saturation Voltage- : VCE(sat)= -0.75V(Max)@ (IC= -4A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

Bipolar Power PNP Low Dropout Regulator Transistor

Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low-dropou inear regulation for switching-regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specf ed in the saturation region and exh

PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS

Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and

Trans GP BJT PNP 40V 4A 3-Pin(3+Tab) TO-220AB

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Temperature Sensors Line Guide

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Easy Identification and Tracing with 10-color Cable

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22x25mm Stratum 3 OCXO

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