位置：首页 > IC中文资料 > MJD122T4GMOS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 |   | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法半导体 |
25+ |
TO-252 |
4650 |
绝对原装公司现货 |
|||
ON/安森美 |
25+ |
TO-252 |
15000 |
全新原装现货,价格优势 |
|||
ON |
20+ |
TO-252 |
50000 |
全新原装公司现货
|
|||
ST(意法) |
24+ |
TO-252-2(DPAK) |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ONSEMI/安森美 |
25+ |
TO252 |
20300 |
ONSEMI/安森美原装特价MJD122T4G即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
ON/安森美 |
24+ |
TO-252 |
30000 |
只做原装进口假一赔十全部自己现货库存 |
|||
ST/意法 |
2025+ |
TO252 |
3000 |
原装进口价格优 请找坤融电子! |
|||
ON/安森美 |
24+ |
TO252 |
33500 |
全新进口原装现货,假一罚十 |
MJD122T4GMOS规格书下载地址
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