High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

TEMPERATURE SENSOR IC

DESCRIPTION The TK11032 is a temperature sensor IC with a linear output of 6 mV/°C over the range of -30 to + 105 °C. Its wide operating voltage range of 2.7 to 10.0 V makes it suitable for a number of applications requiring accurate temperature control, such as electronic thermostats for climate