POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to Type MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applica

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to the PNP MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier appl

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

High?묬urrent Complementary Silicon Power Transistors

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High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

封装/外壳：TO-204AE 包装：散装 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans Darlington NPN 120V 50A 3-Pin(2+Tab) TO-204 Tray

300W NPN Darlington BJT Transistor

Bipolar Junction Transistors

High-Current Complementary Silicon Power Transistors

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封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

EMI/EMC FILTER

Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo

EMI/EMC FILTER

Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo

PVC and Nylon LED Spacers

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