50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to Type MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applica

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to the PNP MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier appl

300W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Bipolar Junction Transistors

High?묬urrent Complementary Silicon Power Transistors

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Trans Darlington NPN 120V 50A 3-Pin(2+Tab) TO-204 Tray

封装/外壳：TO-204AE 包装：散装 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Current Complementary Silicon Power Transistors

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High-Current Complementary Silicon Power Transistors

文件：155.77 Kbytes Page：4 Pages

封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

TEMPERATURE SENSOR IC

DESCRIPTION The TK11032 is a temperature sensor IC with a linear output of 6 mV/°C over the range of -30 to + 105 °C. Its wide operating voltage range of 2.7 to 10.0 V makes it suitable for a number of applications requiring accurate temperature control, such as electronic thermostats for climate