POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to Type MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applica

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to the PNP MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier appl

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

300W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Bipolar Junction Transistors

Trans Darlington NPN 120V 50A 3-Pin(2+Tab) TO-204 Tray

封装/外壳：TO-204AE 包装：散装 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High?묬urrent Complementary Silicon Power Transistors

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High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：155.77 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

TEMPERATURE SENSOR IC

DESCRIPTION The TK11032 is a temperature sensor IC with a linear output of 6 mV/°C over the range of -30 to + 105 °C. Its wide operating voltage range of 2.7 to 10.0 V makes it suitable for a number of applications requiring accurate temperature control, such as electronic thermostats for climate