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MJ11032晶体管资料
MJ11032别名：MJ11032三极管、MJ11032晶体管、MJ11032晶体三极管
MJ11032生产厂家：美国摩托罗拉半导体公司
MJ11032制作材料：Si-N+Darl+Di
MJ11032性质：低频或音频放大 （LF）
MJ11032封装形式：直插封装
MJ11032极限工作电压：120V
MJ11032最大电流允许值：50A
MJ11032最大工作频率：<1MHZ或未知
MJ11032引脚数：2
MJ11032最大耗散功率：300W
MJ11032放大倍数：
MJ11032图片代号：E-44
MJ11032vtest：120
MJ11032htest：999900
- MJ11032atest：50
MJ11032wtest：300
MJ11032代换 MJ11032用什么型号代替：
MJ11032价格
参考价格：￥33.6902
型号：MJ11032G 品牌：ON 备注：这里有MJ11032多少钱，2026年最近7天走势，今日出价，今日竞价，MJ11032批发/采购报价，MJ11032行情走势销售排行榜，MJ11032报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • | MOTOROLA 摩托罗拉 |   | |
MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A | ONSEMI 安森美半导体 | | |
MJ11032 | POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi | MOSPEC 统懋 | | |
MJ11032 | NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS | WINGS 永盛电子 | | |
MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de | SEME-LAB | | |
MJ11032 | isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to Type MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applica | ISC 无锡固电 | | |
MJ11032 | High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJ11032 | Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A • Complement to the PNP MJ11033 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier appl | ZSELEC 淄博圣诺 | | |
MJ11032 | High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
MJ11032 | 封装/外壳：TO-204AE 包装：散装 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJ11032 | Trans Darlington NPN 120V 50A 3-Pin(2+Tab) TO-204 Tray | ETC 知名厂家 | ETC | |
MJ11032 | 300W NPN Darlington BJT Transistor | DIGITRON | | |
MJ11032 | Bipolar Junction Transistors | TTELEC | | |
MJ11032 | High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
High-Current Complementary Silicon Power Transistors 文件：155.77 Kbytes Page：4 Pages | SYC | | ||
封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
EMI/EMC FILTER Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo | DIT | | ||
EMI/EMC FILTER Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo | DIT | | ||
PVC and Nylon LED Spacers 文件：130.419 Kbytes Page：1 Pages | HEYCO | |
MJ11032产品属性
- 类型
描述
- 型号
MJ11032
- 功能描述
达林顿晶体管 50A 120V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
11+ |
TO-3 |
1008 |
原装现货 价格优势 |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
ONSEMI/安森美 |
25+ |
TO-3 |
45000 |
ONSEMI/安森美全新现货MJ11032即刻询购立享优惠#长期有排单订 |
|||
ON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON/安森美 |
24+ |
TO-3 |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||
M |
24+ |
TO 3 |
157341 |
明嘉莱只做原装正品现货 |
|||
ONSEMI |
25+ |
TO-204 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
24+ |
TO-3 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON(安森美) |
23+ |
TO-3 |
9344 |
公司只做原装正品,假一赔十 |
|||
ON/安森美 |
2025+ |
TO-3 |
3000 |
原装进口价格优 请找坤融电子! |
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MJ11032规格书下载地址
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