MJ11014晶体管资料

  • MJ11014别名:MJ11014三极管、MJ11014晶体管、MJ11014晶体三极管

  • MJ11014生产厂家

  • MJ11014制作材料:Si-N+Darl+Di

  • MJ11014性质:开关管 (S)_功率放大 (L)

  • MJ11014封装形式:直插封装

  • MJ11014极限工作电压:90V

  • MJ11014最大电流允许值:30A

  • MJ11014最大工作频率:>4MHZ

  • MJ11014引脚数:2

  • MJ11014最大耗散功率:200W

  • MJ11014放大倍数:β>1000

  • MJ11014图片代号:E-44

  • MJ11014vtest:90

  • MJ11014htest:4000100

  • MJ11014atest:30

  • MJ11014wtest:200

  • MJ11014代换 MJ11014用什么型号代替:BDX68B...C,

型号 功能描述 生产厂家 企业 LOGO 操作
MJ11014

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

ONSEMI

安森美半导体

MJ11014

Power Transistors

Power Transistors TO-3 Case (Continued)

Central

MJ11014

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

MOSPEC

统懋

MJ11014

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

Motorola

摩托罗拉

MJ11014

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 20A • Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A • Complement to Type MJ11013 APPLICATIONS • Designed for use as output devices i

ISC

无锡固电

MJ11014

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJ11014

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

WINGS

永盛电子

MJ11014

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.52 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

MJ11014

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Central

MJ11014

200W NPN Darlington BJT Transistor

DIGITRON

MJ11014

Trans Darlington NPN 90V 30A 3-Pin(2+Tab) TO-3 Sleeve

NJS

Claymore Tube

Description Tube to suit 11007- 11028- 11033 & 11006. 600mm- 10W LED Tube Cool White (4000K)

ATOMAitupu Technology Co., Ltd.

爱特姆深圳市爱特姆科技有限公司

PVC and Nylon LED Spacers

文件:105.12 Kbytes Page:1 Pages

Heyco

TEST JACKS

文件:401.4 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

TEST JACKS

文件:401.4 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

1-4 Pole Rotary Switches

文件:341.27 Kbytes Page:5 Pages

ITT

MJ11014产品属性

  • 类型

    描述

  • 型号

    MJ11014

  • 制造商

    Solid State Devices Inc(SSDI)

  • 功能描述

    TO 3 30 Amp Darlington Transistors NPN

更新时间:2025-9-27 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
23+
NA
20000
全新原装假一赔十
ON
24+
TO-3P
30000
原装正品公司现货,假一赔十!
STMICROEL
23+
NA
304
专做原装正品,假一罚百!
ON进口
25+23+
TO-3
55337
绝对原装正品现货,全新深圳原装进口现货
ON
21+
TO-3P
10000
只做原装,质量保证
MOT
24+
TO-3
10000
MOTOROLA
18+
TO-3
85600
保证进口原装可开17%增值税发票
SPTECH
2447
TO-3
105000
25个/盒一级代理专营品牌!原装正品,优势现货,长期
M
24+
TO-3
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
24+
TO-03
200
进口原装正品优势供应

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