High Ouput Doubler 600 MHz CATV Amplifier Modules

The RF Line High Ouput Doubler 600 MHz CATV Amplifier Modules • 24 V Supply Voltage • Specified for 87–Channel Performance • 6th Generation Die Technology • Improvement in Distortion Over Conventional Hybrids • Allows Higher Output Level Operation • All Gold Metallization • 7 GHz fT Ion–Im

High Ouput Doubler 450/550 MHz CATV Amplifier Modules

The MHW5185B and MHW6185B are designed specifically for 450/550 MHz CATV applications. Features ion–implanted arsenic emitter transistors and an all gold metallization system. • 5th Generation Die Technology • Specified for 60/77–Channel Performance • Broadband Power Gain — @ f = 40–550 MHz

High Ouput Doubler 600 MHz CATV Amplifier Modules

550 MHz, 18 dB, 24 V 77-Channel High Output Doubler CATV Amplifier Module

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant.

High-Speed USB and Audio DPDT Switch

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