CIT SWITCH

文件：142.22 Kbytes Page：2 Pages

Mini-Horns

Features • 12 and 24V operation • Mounts to single gang back box • Compatible with MDL sync module • Mechanically and electrically compatible with PA400 series Mini-Alert™ sounders • Listing for ceiling or wall mounting

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under A

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler Amplifier Module • RoHS Compliant Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protection • GaAs FET Transistor Te

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally Stable Under

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler Amplifier Module • RoHS Compliant Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protection • GaAs FET Transistor Te

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant Features • 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Condi

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

Low Distortion Wideband Amplifiers

The RF Line Low Distortion Wideband Amplifier . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadba

Low Distortion Wideband Amplifiers

The RF Line Low Distortion Wideband Amplifier . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadba

Low Distortion Wideband Amplifiers

The RF Line Low Distortion Wideband Amplifier . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadba

Low Distortion Wideband Amplifiers

The RF Line Low Distortion Wideband Amplifier . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadba

CATV Amplifier Module

CATV Amplifier Module Description • 24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier • Replaced MHW1244. There are no form, fit or function changes with this part replacement. • RoHS Compliant Features • Specified for 12-, 22- and 26-Channel Loading • Excellent Distorti

CATV AMPLIFIER MODULE

The RF Line CATV Amplifier Module Description • 24 Vdc Supply, 5 to 50 MHz, CATV Reverse Amplifier Features • Specified for 4–Channel Loading • Superior Gain, Return Loss and DC Current Stability over Temperature • Capable of Handling Multiple Channels in the Return Path with Good Distortion

Low Distortion Wideband Reverse Amplifier Modules

The RF Line Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Po

Low Distortion Wideband Reverse Amplifier Modules

The RF Line Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Po

GENERAL PURPOSE LINEAR AMPLIFIER MODULE

The RF Line General Purpose Linear Amplifier Module Description • 24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typical ITO = +44 dBm @ 200 MHz • Unconditionally Stable Und

General Purpose Linear Amplifier Module

Description • 24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module • Replaced MHW1345. There are no form, fit or function changes with this part replacement. • RoHS Compliant Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typic

Microwave Bipolar Power Amplifier

The RF Line Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25 Min • 50 Ohm Input/Output System

Microwave Bipolar Power Amplifier

The RF Line Microware Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24 Min • 50 Ohm Input/Output Impedances

UHF Silicon FET Power Amplifier

The RF Line UHF Silicon FET Power Amplifier Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 Volt Characteristics: RF Input Power: 1 mW (0 dBm) RF Output Power: 7 W Minimum Gain (Vcont =

UHF Silicon FET Power Amplifier

The RF Line UHF Silicon FET Power Amplifiers Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 Volt Characteristics: RF Input Power: 20 mW (13 dBm) RF Output Power: 7 W Minimum Gain (V

UHF Silicon FET Power Amplifiers

UHF Silicon FET Power Amplifier

The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 Volt Characteristics: RF Input Power: ≤ 250 mW (MHW2821–1) ≤ 300 mW

UHF Silicon FET Power Amplifiers

UHF Silicon FET Power Amplifier

The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 Volt Characteristics: RF Input Power: ≤ 250 mW (MHW2821–1) ≤ 300 mW

UHF Silicon FET Power Amplifiers

UHF Silicon FET Power Amplifiers

Triple Video Output Hybrid Amplifier

The RF Line Triple Video Output Hybrid Amplifier A high performance triple video output amplifier designed specially for use as the video channel final stage in high resolution color monitors. • Typical 10–90 Transitions Times are 2.5 ns • Supports Video Clock Rates up to 250 MHz • Up to 60 V

Triple Video Output Hybrid Amplifier

The RF Line Triple Video Output Hybrid Amplifier A high performance triple video output amplifier designed specially for use as the video channel final stage in high resolution color monitors. • Typical 10–90 Transitions Times are 2.3 ns • Supports Video Clock Rates up to 250 MHz • Up to 80 V

450 MHz CATV Amplifier

The RF Line 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV trunk–line amplifier. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. • Specified for 53–

450 MHz CATV Amplifier

The RF Line 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV trunk–line amplifier. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. • Specified for 53–

High Ouput Doubler 450/550 MHz CATV Amplifier Modules

The MHW5185B and MHW6185B are designed specifically for 450/550 MHz CATV applications. Features ion–implanted arsenic emitter transistors and an all gold metallization system. • 5th Generation Die Technology • Specified for 60/77–Channel Performance • Broadband Power Gain — @ f = 40–550 MHz

450 MHz CATV Amplifier

The RF Line 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. • Broadband Power

450 MHz CATV Amplifier

The RF Line 450 MHz CATV Amplifier . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 53– and 60–Channel Performance • Broadband Power Gain - @ f = 40–450 MHz

450 MHz CATV Amplifier

The RF Line 450 MHz CATV Amplifier .. . designed specifically for 450 MHz CATV applications. Features ion–implantedarsenic emitter transistors with 7.0 GHz fTand an all gold metallization system. • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40– 450

450 MHz CATV Amplifier

The RF Line 450 MHz CATV Amplifier .. . designed specifically for 450 MHz CATV applications. Features ion–implantedarsenic emitter transistors with 7.0 GHz fTand an all gold metallization system. • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40– 450

550 MHz CATV Amplifier

The RF Line 550 MHz CATV Amplifier . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 77 Channel Performance • Broadband Power Gain - @ f = 40–550 MHz Gp = 14 dB

77-Channel(550 MHz) CATV Input/Output Trunk Amplifier

The RF Line 77-Channel (550 MHz) CATV Input/Output Trunk Amplifier . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. • Specified for 77–Channel Performance • Broadband Power Gain —

550 MHz CATV Amplifier

The RF Line 550 MHz CATV Amplifier . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 77 Channel Performance • Broadband Power Gain - @ f = 40–550 MHz Gp = 18.2

600 MHz CATV Amplifier Module

The RF Line 600 MHz CATV Amplifier Module This module is designed specifically for 600 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. • Specified for 87–Channel Performance • Broadband Power Gain — @ f = 40–600 MHz

High Ouput Doubler 600 MHz CATV Amplifier Modules

The RF Line High Ouput Doubler 600 MHz CATV Amplifier Modules • 24 V Supply Voltage • Specified for 87–Channel Performance • 6th Generation Die Technology • Improvement in Distortion Over Conventional Hybrids • Allows Higher Output Level Operation • All Gold Metallization • 7 GHz fT Ion–Im

High Ouput Doubler 450/550 MHz CATV Amplifier Modules

The MHW5185B and MHW6185B are designed specifically for 450/550 MHz CATV applications. Features ion–implanted arsenic emitter transistors and an all gold metallization system. • 5th Generation Die Technology • Specified for 60/77–Channel Performance • Broadband Power Gain — @ f = 40–550 MHz

High Ouput Doubler 600 MHz CATV Amplifier

The RF Line High Ouput Doubler 600 MHz CATV Amplifier • 24 V Supply Voltage • Specified for 87–Channel Performance • 6th Generation Die Technology • Improvement in Distortion Over Conventional Hybrids • Allows Higher Output Level Operation • All Gold Metallization • 7 GHz fT Ion–Implanted

550 MHz CATV Amplifier

The RF Line 550 MHz CATV Amplifier . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 77–Channel Performance • Broadband Power Gain - @ f = 40–550 MHz Gp = 22 dB

77-Channel(550 MHz) CATV Line Extender Amplifier

The RF Line 77-Channel(550 MHz) CATV Line Extender Amplifier • Specified for 60– and 77–Channel Performance • Broadband Power Gain - @ f = 40–550 MHz Gp = 27 dB (Typ) • Broadband Noise Figure NF = 6 dB (Typ) @ 550 MHz • Superior Gain, Return Loss and DC Current Stability with Temperat

77-Channel(550 MHz) CATV Amplifier

The RF Line 77-Channel (550 MHz) CATV Amplifier . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. • Specified for 77–Channel Performance • Broadband Power Gain - @ f = 40–550 MHz

CATV Amplifier Module

CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 550 MHz, CATV Forward Amplifier Module • Replaced MHW6342T. There are no form, fit or function changes with this part replacement. • RoHS Compliant Features • Specified for 77-Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss

750 MHz CATV Conventional Hybrid Amplifier

The RF Line 750 MHz CATV Conventional Hybrid Amplifier Designed specifically for 750 MHz CATV applications. Features ion–implanted arsenic emitter transistors with an all gold metallization system. • Supply Voltage = 24 Vdc • 5th Generation Die Technology • Specified for 110 Channel Performan

18 dB GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS

The MHW7182, MHW8182, and MHW9182 are designed specifically for up to 1000 MHz CATV systems as output amplifiers in trunk and line extender applications. These amplifiers feature ion–implanted, arsenic emitter transistors and an all gold metallization system • Specified for 110/128/152–Channel Pe

110-Channel 750 MHz CATV Amplifier

The RF Line 110-Channel 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 750 MHz Gp = 18.8 dB (Typ) • Broadband Noise Figure NF = 5.0 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Improved Rug

High Ouput Power Doubler 750 MHz CATV Amplifier

Designed specifically for 750 MHz CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system. • Supply Voltage = 24 Vdc • 6th Generation Die Technology • Specified for 110 Channel Performance • Broadband Power Gain @ f = 50 MHz Gp =

High Ouput Power Doubler 750 MHz CATV Amplifier

Designed specifically for 750 MHz CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system. • Supply Voltage = 24 Vdc • 6th Generation Die Technology • Specified for 110 Channel Performance • Broadband Power Gain @ f = 50 MHz Gp =

High Ouput Power Doubler 750 MHz CATV Amplifier

• Specified for 77 and 110–Channel Performance • Broadband Power Gain  @ f = 40–750 MHz Gp = 19.4 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • Superior Gain, Return Loss and DC Current Stability with Temperature • All Gold Metallization • 7 GHz fT Ion–I

CATV Amplifier Module 750 MHz 19.2 dB GAIN 110-CHANNEL

Description • 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier Module • Replaced MHW7185CL. There are no form, fit or function changes with this part replacement. • RoHS Compliant Features • Specified for 77- and 110-Channel Loading • Lower DC Current Requirem

750 MHz CATV 19.4 dB GAIN 110-CHANNEL Amplifier Module

Description • 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier Module • Replaced MHW7185C. There are no form, fit or function changes with this part replacement. • RoHS Compliant Features • Specified for 77- and 110-Channel Loading • Excellent Distortion Perfo

High Ouput Mirror Power Doubler 750 MHz CATV Amplifier

• Specified for 77 and 110–Channel Performance • Broadband Power Gain  @ f = 750 MHz Gp = 19.4 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • Pin Configuration Mirrors that of MHW7185C • Typical CTB @ 750 MHz under 110–Channel FLAT Loading = –64 dBc

High Ouput Power Doubler 750 MHz CATV Amplifier

High Ouput Power Doubler 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 40–750 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Composite Triple Be

High Ouput Power Doubler 750 MHz CATV Amplifier

Designed specifically for 750 MHz CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system. • Supply Voltage = 24 Vdc • 6th Generation Die Technology • Specified for 110 Channel Performance • Broadband Power Gain @ f = 50 MHz Gp =