IGBT(内置FRD)

MGF65A3H是650V Field Stop型Trench型IGBT。独特的垂直沟道构造减小了寄生容量。高速开关、可以实现开关损耗的降低。IGBT的低损耗有助于系统的高效率。 ・低饱和电压・高速开关・FRD内置・RoHS对应;

Trench Field Stop IGBTs with Fast Recovery Diode

文件：768.65 Kbytes Page：15 Pages

Trench Field Stop IGBTs with Fast Recovery Diode

文件：768.65 Kbytes Page：15 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 45A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 45A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 25 Volts CURRENT 38 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

VCE = 650 V, IC = 15 A Trench Field Stop IGBT

文件：394.66 Kbytes Page：12 Pages