High Frequency Devices-GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4965BM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Louvered Plugs

文件：153.72 Kbytes Page：1 Pages

Multi-Channel BERT 12.5 Gb/s

文件：2.44678 Mbytes Page：12 Pages

Power MOSFET 30 V, 68 A, Single N?묬hannel, DPAK/IPAK

文件：118.08 Kbytes Page：7 Pages