L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency nadd=48(TYP.

L & S BAND / 1.2W High-power GaAs FET

DESCRIPTION\nThe MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.\nFEATURES\nHigh output power \n       Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm\nHigh power gain\n      Gp=13dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n   nadd=48%(TYP.) @f=1.9GHz,Pin=18d High output power \n       Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm\nHigh power gain\n      Gp=13dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n   nadd=48%(TYP.) @f=1.9GHz,Pin=18dBm\nHermetic Package\nAPPLICATION\nFor UHF Band power amplifiers;

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes Page：4 Pages

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48 minimum power added efficiency under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior perform

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes Page：2 Pages

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes Page：2 Pages