Power Management in Note book

GENERAL DESCRIPTION The ME2328 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦ 270mΩ@VGS=10V ● RDS(ON)≦ 340

三极管

MOSFET

Power Management in Note book

GENERAL DESCRIPTION The ME2328 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦ 270mΩ@VGS=10V ● RDS(ON)≦ 340

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