| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET650V,7AN-CHANNEL FEATURE •RoHSCompliant •RDS(ON),typ.=1.2Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.17868 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
TO-263 |
123203 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
24+ |
50000 |
|||||
CET/華瑞 |
23+ |
TO-263 |
360000 |
交期准时服务周到 |
|||
CET/華瑞 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
C |
23+ |
T0-263 |
6000 |
原装正品，支持实单 |
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